TY - JOUR
T1 - Near-infrared photodetection in n-type nanocrystalline FeSi 2/p-type Si heterojunctions
AU - Promros, Nathaporn
AU - Chen, Li
AU - Yoshitake, Tsuyoshi
PY - 2013/5
Y1 - 2013/5
N2 - n-Type nanocrystalline (NC) FeSi2/p-type Si heterojunctions, which were prepared by pulsed laser deposition, were evaluated as a near infrared photodiode. The built-in potential was estimated to be approximately 1.1 eV from the capacitance-voltage measurement. These junctions showed a rectifying behavior accompanied by a large leakage current. The near infrared light detection performance was evaluated using a 1.33 μm laser in the temperature range of 77-300 K. At a reverse bias of -5 V, the detectivity was 5.5 × 107 cm Hz1/2 W-1 at 300 K and it was dramatically enhanced to be 8.0 × 1010 cm Hz1/2 W-1 at 77 K. It was demonstrated that NC-FeSi2 is a new potential material applicable to NIR photodetectors operating at low temperatures.
AB - n-Type nanocrystalline (NC) FeSi2/p-type Si heterojunctions, which were prepared by pulsed laser deposition, were evaluated as a near infrared photodiode. The built-in potential was estimated to be approximately 1.1 eV from the capacitance-voltage measurement. These junctions showed a rectifying behavior accompanied by a large leakage current. The near infrared light detection performance was evaluated using a 1.33 μm laser in the temperature range of 77-300 K. At a reverse bias of -5 V, the detectivity was 5.5 × 107 cm Hz1/2 W-1 at 300 K and it was dramatically enhanced to be 8.0 × 1010 cm Hz1/2 W-1 at 77 K. It was demonstrated that NC-FeSi2 is a new potential material applicable to NIR photodetectors operating at low temperatures.
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U2 - 10.1166/jnn.2013.7311
DO - 10.1166/jnn.2013.7311
M3 - Article
C2 - 23858906
AN - SCOPUS:84876927399
VL - 13
SP - 3577
EP - 3581
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 5
ER -