Near-infrared photodetection in n-type nanocrystalline FeSi 2/p-type Si heterojunctions

Nathaporn Promros, Li Chen, Tsuyoshi Yoshitake

    研究成果: ジャーナルへの寄稿学術誌査読

    13 被引用数 (Scopus)

    抄録

    n-Type nanocrystalline (NC) FeSi2/p-type Si heterojunctions, which were prepared by pulsed laser deposition, were evaluated as a near infrared photodiode. The built-in potential was estimated to be approximately 1.1 eV from the capacitance-voltage measurement. These junctions showed a rectifying behavior accompanied by a large leakage current. The near infrared light detection performance was evaluated using a 1.33 μm laser in the temperature range of 77-300 K. At a reverse bias of -5 V, the detectivity was 5.5 × 107 cm Hz1/2 W-1 at 300 K and it was dramatically enhanced to be 8.0 × 1010 cm Hz1/2 W-1 at 77 K. It was demonstrated that NC-FeSi2 is a new potential material applicable to NIR photodetectors operating at low temperatures.

    本文言語英語
    ページ(範囲)3577-3581
    ページ数5
    ジャーナルJournal of nanoscience and nanotechnology
    13
    5
    DOI
    出版ステータス出版済み - 5月 2013

    !!!All Science Journal Classification (ASJC) codes

    • バイオエンジニアリング
    • 化学 (全般)
    • 生体医工学
    • 材料科学(全般)
    • 凝縮系物理学

    フィンガープリント

    「Near-infrared photodetection in n-type nanocrystalline FeSi 2/p-type Si heterojunctions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル