Necessity of epitaxial growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes

R. Iwasaki, N. Promros, K. Yamashita, S. Izumi, S. Funasaki, M. Shaban, T. Yoshitake

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    抄録

    n-Type β-FeSi2 thin films were epitaxially and non-epitaxially grown on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) at a substrate temperature of 600°C. Whereas the n-type epitaxial β-FeSi2/p-type Si heterojunctions exhibited a typical rectifying behavior with a rectification ratio of more than two orders of magnitude at bias voltages between ±1 V, the heterojunctions comprising non-epitaxial β-FeSi2 films rarely exhibited rectifying action. The epitaxial growth of β-FeSi2 is an significant factor for forming the heterojunction diodes.

    本文言語英語
    ホスト出版物のタイトルLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
    ページ157-162
    ページ数6
    6
    DOI
    出版ステータス出版済み - 2012
    イベントSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, 米国
    継続期間: 10 7 201210 12 2012

    出版物シリーズ

    名前ECS Transactions
    番号6
    50
    ISSN(印刷版)1938-5862
    ISSN(電子版)1938-6737

    その他

    その他Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
    Country米国
    CityHonolulu, HI
    Period10/7/1210/12/12

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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