Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs

Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin Ichiro Abe, Keita Nakano, Hayato Takeshita, Motonobu Tampo, Soshi Takeshita, Yasuhiro Miyake

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.

元の言語英語
ホスト出版物のタイトル2019 IEEE International Reliability Physics Symposium, IRPS 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781538695043
DOI
出版物ステータス出版済み - 5 22 2019
イベント2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, 米国
継続期間: 3 31 20194 4 2019

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2019-March
ISSN(印刷物)1541-7026

会議

会議2019 IEEE International Reliability Physics Symposium, IRPS 2019
米国
Monterey
期間3/31/194/4/19

Fingerprint

Static random access storage
Ionization
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Liao, W., Hashimoto, M., Manabe, S., Watanabe, Y., Abe, S. I., Nakano, K., ... Miyake, Y. (2019). Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. : 2019 IEEE International Reliability Physics Symposium, IRPS 2019 [8720568] (IEEE International Reliability Physics Symposium Proceedings; 巻数 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720568

Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. / Liao, Wang; Hashimoto, Masanori; Manabe, Seiya; Watanabe, Yukinobu; Abe, Shin Ichiro; Nakano, Keita; Takeshita, Hayato; Tampo, Motonobu; Takeshita, Soshi; Miyake, Yasuhiro.

2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8720568 (IEEE International Reliability Physics Symposium Proceedings; 巻 2019-March).

研究成果: 著書/レポートタイプへの貢献会議での発言

Liao, W, Hashimoto, M, Manabe, S, Watanabe, Y, Abe, SI, Nakano, K, Takeshita, H, Tampo, M, Takeshita, S & Miyake, Y 2019, Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. : 2019 IEEE International Reliability Physics Symposium, IRPS 2019., 8720568, IEEE International Reliability Physics Symposium Proceedings, 巻. 2019-March, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, 米国, 3/31/19. https://doi.org/10.1109/IRPS.2019.8720568
Liao W, Hashimoto M, Manabe S, Watanabe Y, Abe SI, Nakano K その他. Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. : 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8720568. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2019.8720568
Liao, Wang ; Hashimoto, Masanori ; Manabe, Seiya ; Watanabe, Yukinobu ; Abe, Shin Ichiro ; Nakano, Keita ; Takeshita, Hayato ; Tampo, Motonobu ; Takeshita, Soshi ; Miyake, Yasuhiro. / Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (IEEE International Reliability Physics Symposium Proceedings).
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abstract = "In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1{\%} at 28-nm node with operating voltage of 0.6 V while it is 1.8{\%} at 65-nm node with 0.9 V.",
author = "Wang Liao and Masanori Hashimoto and Seiya Manabe and Yukinobu Watanabe and Abe, {Shin Ichiro} and Keita Nakano and Hayato Takeshita and Motonobu Tampo and Soshi Takeshita and Yasuhiro Miyake",
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AU - Liao, Wang

AU - Hashimoto, Masanori

AU - Manabe, Seiya

AU - Watanabe, Yukinobu

AU - Abe, Shin Ichiro

AU - Nakano, Keita

AU - Takeshita, Hayato

AU - Tampo, Motonobu

AU - Takeshita, Soshi

AU - Miyake, Yasuhiro

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AB - In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.

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