Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs

Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin Ichiro Abe, Keita Nakano, Hayato Takeshita, Motonobu Tampo, Soshi Takeshita, Yasuhiro Miyake

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 引用 (Scopus)

抜粋

In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.

元の言語英語
ホスト出版物のタイトル2019 IEEE International Reliability Physics Symposium, IRPS 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781538695043
DOI
出版物ステータス出版済み - 5 22 2019
イベント2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, 米国
継続期間: 3 31 20194 4 2019

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2019-March
ISSN(印刷物)1541-7026

会議

会議2019 IEEE International Reliability Physics Symposium, IRPS 2019
米国
Monterey
期間3/31/194/4/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Liao, W., Hashimoto, M., Manabe, S., Watanabe, Y., Abe, S. I., Nakano, K., Takeshita, H., Tampo, M., Takeshita, S., & Miyake, Y. (2019). Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs. : 2019 IEEE International Reliability Physics Symposium, IRPS 2019 [8720568] (IEEE International Reliability Physics Symposium Proceedings; 巻数 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720568