Negative and Positive Muon-Induced SEU Cross Sections in 28-nm and 65-nm Planar Bulk CMOS SRAMs

Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin Ichiro Abe, Keita Nakano, Hayato Takeshita, Motonobu Tampo, Soshi Takeshita, Yasuhiro Miyake

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

4 被引用数 (Scopus)

抄録

In this paper, we compare the negative and positive muon-induced SEU event cross sections of 28-nm and 65-nm planar bulk CMOS SRAMs. Our measurement results show a 3.6 X increase in muon-induced SEU event cross section from 65-nm to 28-nm technology, and negative muon-induced SEU event cross section is 3.3 X larger compared to positive muons at 28-nm technology. This result is consistent with the previous works reporting muon-induced SEU event cross section increases with technology scaling. The measured result also suggests the contribution of direct ionization to the total SEU event cross section is 54.1% at 28-nm node with operating voltage of 0.6 V while it is 1.8% at 65-nm node with 0.9 V.

本文言語英語
ホスト出版物のタイトル2019 IEEE International Reliability Physics Symposium, IRPS 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781538695043
DOI
出版ステータス出版済み - 5月 22 2019
イベント2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, 米国
継続期間: 3月 31 20194月 4 2019

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2019-March
ISSN(印刷版)1541-7026

会議

会議2019 IEEE International Reliability Physics Symposium, IRPS 2019
国/地域米国
CityMonterey
Period3/31/194/4/19

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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