Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs

Seiya Manabe, Yukinobu Watanabe, Wang Liao, Masanori Hashimoto, Keita Nakano, Hikaru Sato, Tadahiro Kin, Shin Ichiro Abe, Koji Hamada, Motonobu Tampo, Yasuhiro Miyake

研究成果: Contribution to journalArticle査読

9 被引用数 (Scopus)

抄録

We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body and thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function of incident muon momentum and operating supply voltage. The experimental results show that the negative muon SEUs occur at about three times higher rate than the positive muon ones at the supply voltage of 0.5 V when the incident muons stop near the sensitive volume (SV). A Monte-Carlo simulation with the particle and heavy ion transport code system (PHITS) was carried out using a simple SV model. The simulation based on the PHITS using the SV model is found to reproduce generally well the momentum dependence of the measured SEU cross sections for both positive and negative muons. From the simulation, the charged particles and secondary ions having significant influence on SEUs are specified and the differences between negative and positive muons are discussed.

本文言語英語
論文番号8362952
ページ(範囲)1742-1749
ページ数8
ジャーナルIEEE Transactions on Nuclear Science
65
8
DOI
出版ステータス出版済み - 8 2018

All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学

フィンガープリント

「Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル