Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs

Seiya Manabe, Yukinobu Watanabe, Wang Liao, Masanori Hashimoto, Keita Nakano, Hikaru Sato, Tadahiro Kin, Shin Ichiro Abe, Koji Hamada, Motonobu Tampo, Yasuhiro Miyake

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

抄録

We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body and thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function of incident muon momentum and operating supply voltage. The experimental results show that the negative muon SEUs occur at about three times higher rate than the positive muon ones at the supply voltage of 0.5 V when the incident muons stop near the sensitive volume (SV). A Monte-Carlo simulation with the particle and heavy ion transport code system (PHITS) was carried out using a simple SV model. The simulation based on the PHITS using the SV model is found to reproduce generally well the momentum dependence of the measured SEU cross sections for both positive and negative muons. From the simulation, the charged particles and secondary ions having significant influence on SEUs are specified and the differences between negative and positive muons are discussed.

元の言語英語
記事番号8362952
ページ(範囲)1742-1749
ページ数8
ジャーナルIEEE Transactions on Nuclear Science
65
発行部数8
DOI
出版物ステータス出版済み - 8 1 2018

Fingerprint

single event upsets
Static random access storage
SOI (semiconductors)
Heavy ions
muons
Momentum
Silicon oxides
Electric potential
Charged particles
Irradiation
Data storage equipment
Ions
heavy ions
thin bodies
momentum
simulation
random access memory
cross sections
electric potential
silicon oxides

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

これを引用

Manabe, S., Watanabe, Y., Liao, W., Hashimoto, M., Nakano, K., Sato, H., ... Miyake, Y. (2018). Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs. IEEE Transactions on Nuclear Science, 65(8), 1742-1749. [8362952]. https://doi.org/10.1109/TNS.2018.2839704

Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs. / Manabe, Seiya; Watanabe, Yukinobu; Liao, Wang; Hashimoto, Masanori; Nakano, Keita; Sato, Hikaru; Kin, Tadahiro; Abe, Shin Ichiro; Hamada, Koji; Tampo, Motonobu; Miyake, Yasuhiro.

:: IEEE Transactions on Nuclear Science, 巻 65, 番号 8, 8362952, 01.08.2018, p. 1742-1749.

研究成果: ジャーナルへの寄稿記事

Manabe, S, Watanabe, Y, Liao, W, Hashimoto, M, Nakano, K, Sato, H, Kin, T, Abe, SI, Hamada, K, Tampo, M & Miyake, Y 2018, 'Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs', IEEE Transactions on Nuclear Science, 巻. 65, 番号 8, 8362952, pp. 1742-1749. https://doi.org/10.1109/TNS.2018.2839704
Manabe, Seiya ; Watanabe, Yukinobu ; Liao, Wang ; Hashimoto, Masanori ; Nakano, Keita ; Sato, Hikaru ; Kin, Tadahiro ; Abe, Shin Ichiro ; Hamada, Koji ; Tampo, Motonobu ; Miyake, Yasuhiro. / Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs. :: IEEE Transactions on Nuclear Science. 2018 ; 巻 65, 番号 8. pp. 1742-1749.
@article{d42c2b39c8f44ff3a723d29c9865d3c7,
title = "Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs",
abstract = "We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body and thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function of incident muon momentum and operating supply voltage. The experimental results show that the negative muon SEUs occur at about three times higher rate than the positive muon ones at the supply voltage of 0.5 V when the incident muons stop near the sensitive volume (SV). A Monte-Carlo simulation with the particle and heavy ion transport code system (PHITS) was carried out using a simple SV model. The simulation based on the PHITS using the SV model is found to reproduce generally well the momentum dependence of the measured SEU cross sections for both positive and negative muons. From the simulation, the charged particles and secondary ions having significant influence on SEUs are specified and the differences between negative and positive muons are discussed.",
author = "Seiya Manabe and Yukinobu Watanabe and Wang Liao and Masanori Hashimoto and Keita Nakano and Hikaru Sato and Tadahiro Kin and Abe, {Shin Ichiro} and Koji Hamada and Motonobu Tampo and Yasuhiro Miyake",
year = "2018",
month = "8",
day = "1",
doi = "10.1109/TNS.2018.2839704",
language = "English",
volume = "65",
pages = "1742--1749",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs

AU - Manabe, Seiya

AU - Watanabe, Yukinobu

AU - Liao, Wang

AU - Hashimoto, Masanori

AU - Nakano, Keita

AU - Sato, Hikaru

AU - Kin, Tadahiro

AU - Abe, Shin Ichiro

AU - Hamada, Koji

AU - Tampo, Motonobu

AU - Miyake, Yasuhiro

PY - 2018/8/1

Y1 - 2018/8/1

N2 - We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body and thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function of incident muon momentum and operating supply voltage. The experimental results show that the negative muon SEUs occur at about three times higher rate than the positive muon ones at the supply voltage of 0.5 V when the incident muons stop near the sensitive volume (SV). A Monte-Carlo simulation with the particle and heavy ion transport code system (PHITS) was carried out using a simple SV model. The simulation based on the PHITS using the SV model is found to reproduce generally well the momentum dependence of the measured SEU cross sections for both positive and negative muons. From the simulation, the charged particles and secondary ions having significant influence on SEUs are specified and the differences between negative and positive muons are discussed.

AB - We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body and thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function of incident muon momentum and operating supply voltage. The experimental results show that the negative muon SEUs occur at about three times higher rate than the positive muon ones at the supply voltage of 0.5 V when the incident muons stop near the sensitive volume (SV). A Monte-Carlo simulation with the particle and heavy ion transport code system (PHITS) was carried out using a simple SV model. The simulation based on the PHITS using the SV model is found to reproduce generally well the momentum dependence of the measured SEU cross sections for both positive and negative muons. From the simulation, the charged particles and secondary ions having significant influence on SEUs are specified and the differences between negative and positive muons are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85047650839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047650839&partnerID=8YFLogxK

U2 - 10.1109/TNS.2018.2839704

DO - 10.1109/TNS.2018.2839704

M3 - Article

AN - SCOPUS:85047650839

VL - 65

SP - 1742

EP - 1749

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 8

M1 - 8362952

ER -