Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method

Shin Ichiro Abe, Yukinobu Watanabe, Nozomi Shibano, Nobuyuki Sano, Hiroshi Furuta, Masafumi Tsutsui, Taiki Uemura, Takahiko Arakawa

研究成果: 著書/レポートタイプへの貢献会議での発言

12 引用 (Scopus)

抄録

We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.

元の言語英語
ホスト出版物のタイトル2012 IEEE International Reliability Physics Symposium, IRPS 2012
DOI
出版物ステータス出版済み - 9 28 2012
イベント2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, 米国
継続期間: 4 15 20124 19 2012

その他

その他2012 IEEE International Reliability Physics Symposium, IRPS 2012
米国
Anaheim, CA
期間4/15/124/19/12

Fingerprint

Error analysis
Neutrons
Ions
Monte Carlo simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Abe, S. I., Watanabe, Y., Shibano, N., Sano, N., Furuta, H., Tsutsui, M., ... Arakawa, T. (2012). Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. : 2012 IEEE International Reliability Physics Symposium, IRPS 2012 [6241928] https://doi.org/10.1109/IRPS.2012.6241928

Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. / Abe, Shin Ichiro; Watanabe, Yukinobu; Shibano, Nozomi; Sano, Nobuyuki; Furuta, Hiroshi; Tsutsui, Masafumi; Uemura, Taiki; Arakawa, Takahiko.

2012 IEEE International Reliability Physics Symposium, IRPS 2012. 2012. 6241928.

研究成果: 著書/レポートタイプへの貢献会議での発言

Abe, SI, Watanabe, Y, Shibano, N, Sano, N, Furuta, H, Tsutsui, M, Uemura, T & Arakawa, T 2012, Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. : 2012 IEEE International Reliability Physics Symposium, IRPS 2012., 6241928, 2012 IEEE International Reliability Physics Symposium, IRPS 2012, Anaheim, CA, 米国, 4/15/12. https://doi.org/10.1109/IRPS.2012.6241928
Abe SI, Watanabe Y, Shibano N, Sano N, Furuta H, Tsutsui M その他. Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. : 2012 IEEE International Reliability Physics Symposium, IRPS 2012. 2012. 6241928 https://doi.org/10.1109/IRPS.2012.6241928
Abe, Shin Ichiro ; Watanabe, Yukinobu ; Shibano, Nozomi ; Sano, Nobuyuki ; Furuta, Hiroshi ; Tsutsui, Masafumi ; Uemura, Taiki ; Arakawa, Takahiko. / Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method. 2012 IEEE International Reliability Physics Symposium, IRPS 2012. 2012.
@inproceedings{eecf4126f79f4dfc9d929c758794423d,
title = "Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method",
abstract = "We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.",
author = "Abe, {Shin Ichiro} and Yukinobu Watanabe and Nozomi Shibano and Nobuyuki Sano and Hiroshi Furuta and Masafumi Tsutsui and Taiki Uemura and Takahiko Arakawa",
year = "2012",
month = "9",
day = "28",
doi = "10.1109/IRPS.2012.6241928",
language = "English",
isbn = "9781457716799",
booktitle = "2012 IEEE International Reliability Physics Symposium, IRPS 2012",

}

TY - GEN

T1 - Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method

AU - Abe, Shin Ichiro

AU - Watanabe, Yukinobu

AU - Shibano, Nozomi

AU - Sano, Nobuyuki

AU - Furuta, Hiroshi

AU - Tsutsui, Masafumi

AU - Uemura, Taiki

AU - Arakawa, Takahiko

PY - 2012/9/28

Y1 - 2012/9/28

N2 - We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.

AB - We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of MeV have a significant contribution to soft errors regardless of design rule and critical charge.

UR - http://www.scopus.com/inward/record.url?scp=84866626158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866626158&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2012.6241928

DO - 10.1109/IRPS.2012.6241928

M3 - Conference contribution

SN - 9781457716799

BT - 2012 IEEE International Reliability Physics Symposium, IRPS 2012

ER -