Neutron-induced soft error rate estimation for SRAM using PHITS

Shusuke Yoshimoto, Takuro Amashita, Masayoshi Yoshimura, Yusuke Matsunaga, Hiroto Yasuura, Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

7 被引用数 (Scopus)

抄録

This paper presents a novel neutron-induced soft-error-rate (SER) estimation tool with a particle transport code: PHITS. The proposed tool can calculate the SER according to various data patterns and the layout of the memory cells in an SRAM. As layouts, two kinds of an NMOS-PMOS-NMOS 6T and an inside-out PMOS-NMOS-PMOS versions are considered. The proposed tool distinguishes a single-event-upset (SEU) SER, a horizontal multiple-cell-upset (MCU) SER, and a vertical MCU SER using an extracting function. The horizontal MCU SER in the inside-out version of the PMOS-NMOS-PMOS 6T SRAM cell layout was expected to be 26-41% less than that of the general NMOS-PMOS-NMOS 6T cell layout.

本文言語英語
ホスト出版物のタイトルProceedings of the 2012 IEEE 18th International On-Line Testing Symposium, IOLTS 2012
ページ138-141
ページ数4
DOI
出版ステータス出版済み - 11 22 2012
イベント2012 IEEE 18th International On-Line Testing Symposium, IOLTS 2012 - Sitges, スペイン
継続期間: 6 27 20126 29 2012

出版物シリーズ

名前Proceedings of the 2012 IEEE 18th International On-Line Testing Symposium, IOLTS 2012

その他

その他2012 IEEE 18th International On-Line Testing Symposium, IOLTS 2012
Countryスペイン
CitySitges
Period6/27/126/29/12

All Science Journal Classification (ASJC) codes

  • Safety, Risk, Reliability and Quality

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