New approach to formation of nanopore on SOI

SiC/Si heteroepitaxial growth by supersonic jet CVD

Yoshifumi Ikoma, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, Teruaki Motooka

研究成果: 著書/レポートタイプへの貢献会議での発言

4 引用 (Scopus)

抄録

We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

元の言語英語
ホスト出版物のタイトルSixth International Conference on Thin Film Physics and Applications
6984
DOI
出版物ステータス出版済み - 4 21 2008
イベント6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, 中国
継続期間: 9 25 20079 28 2007

その他

その他6th International Conference on Thin Film Physics and Applications, TFPA 2007
中国
Shanghai
期間9/25/079/28/07

Fingerprint

Nanopores
SOI (semiconductors)
Epitaxial growth
Chemical vapor deposition
vapor deposition
Oxides
oxides
flat surfaces
Silicon
insulators
Substrates
silicon

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

これを引用

Ikoma, Y., Ono, K., Uenuma, M., Ogata, T., & Motooka, T. (2008). New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD. : Sixth International Conference on Thin Film Physics and Applications (巻 6984). [69841V] https://doi.org/10.1117/12.792771

New approach to formation of nanopore on SOI : SiC/Si heteroepitaxial growth by supersonic jet CVD. / Ikoma, Yoshifumi; Ono, Kenta; Uenuma, Mutsunori; Ogata, Tomohiko; Motooka, Teruaki.

Sixth International Conference on Thin Film Physics and Applications. 巻 6984 2008. 69841V.

研究成果: 著書/レポートタイプへの貢献会議での発言

Ikoma, Y, Ono, K, Uenuma, M, Ogata, T & Motooka, T 2008, New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD. : Sixth International Conference on Thin Film Physics and Applications. 巻. 6984, 69841V, 6th International Conference on Thin Film Physics and Applications, TFPA 2007, Shanghai, 中国, 9/25/07. https://doi.org/10.1117/12.792771
Ikoma Y, Ono K, Uenuma M, Ogata T, Motooka T. New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD. : Sixth International Conference on Thin Film Physics and Applications. 巻 6984. 2008. 69841V https://doi.org/10.1117/12.792771
Ikoma, Yoshifumi ; Ono, Kenta ; Uenuma, Mutsunori ; Ogata, Tomohiko ; Motooka, Teruaki. / New approach to formation of nanopore on SOI : SiC/Si heteroepitaxial growth by supersonic jet CVD. Sixth International Conference on Thin Film Physics and Applications. 巻 6984 2008.
@inproceedings{c3aef91c9a3f4e1ea9781b46c6db7051,
title = "New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD",
abstract = "We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.",
author = "Yoshifumi Ikoma and Kenta Ono and Mutsunori Uenuma and Tomohiko Ogata and Teruaki Motooka",
year = "2008",
month = "4",
day = "21",
doi = "10.1117/12.792771",
language = "English",
isbn = "9780819471826",
volume = "6984",
booktitle = "Sixth International Conference on Thin Film Physics and Applications",

}

TY - GEN

T1 - New approach to formation of nanopore on SOI

T2 - SiC/Si heteroepitaxial growth by supersonic jet CVD

AU - Ikoma, Yoshifumi

AU - Ono, Kenta

AU - Uenuma, Mutsunori

AU - Ogata, Tomohiko

AU - Motooka, Teruaki

PY - 2008/4/21

Y1 - 2008/4/21

N2 - We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

AB - We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

UR - http://www.scopus.com/inward/record.url?scp=42149193938&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149193938&partnerID=8YFLogxK

U2 - 10.1117/12.792771

DO - 10.1117/12.792771

M3 - Conference contribution

SN - 9780819471826

VL - 6984

BT - Sixth International Conference on Thin Film Physics and Applications

ER -