New crucible design for SiC single crystal growth by sublimation

Shinichi Nishizawa, H. Yamaguchi, T. Kato, M. N. Khan, K. Arai, N. Oyanagi, Y. Kitou, W. Bahng

研究成果: ジャーナルへの寄稿Conference article

3 引用 (Scopus)

抄録

SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

元の言語英語
ジャーナルMaterials Research Society Symposium - Proceedings
640
出版物ステータス出版済み - 1 1 2001
イベントSilicon Carbide- Materials, Processing and Devices - Boston, MA, 米国
継続期間: 11 27 200011 29 2000

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Sublimation
Crucibles
crucibles
Crystallization
sublimation
Crystal growth
crystal growth
Single crystals
single crystals
Seed
seeds
flat surfaces
heat transfer
inclusions
Heat transfer
Crystals
cavities
crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Nishizawa, S., Yamaguchi, H., Kato, T., Khan, M. N., Arai, K., Oyanagi, N., ... Bahng, W. (2001). New crucible design for SiC single crystal growth by sublimation. Materials Research Society Symposium - Proceedings, 640.

New crucible design for SiC single crystal growth by sublimation. / Nishizawa, Shinichi; Yamaguchi, H.; Kato, T.; Khan, M. N.; Arai, K.; Oyanagi, N.; Kitou, Y.; Bahng, W.

:: Materials Research Society Symposium - Proceedings, 巻 640, 01.01.2001.

研究成果: ジャーナルへの寄稿Conference article

Nishizawa, S, Yamaguchi, H, Kato, T, Khan, MN, Arai, K, Oyanagi, N, Kitou, Y & Bahng, W 2001, 'New crucible design for SiC single crystal growth by sublimation', Materials Research Society Symposium - Proceedings, 巻. 640.
Nishizawa, Shinichi ; Yamaguchi, H. ; Kato, T. ; Khan, M. N. ; Arai, K. ; Oyanagi, N. ; Kitou, Y. ; Bahng, W. / New crucible design for SiC single crystal growth by sublimation. :: Materials Research Society Symposium - Proceedings. 2001 ; 巻 640.
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abstract = "SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.",
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T1 - New crucible design for SiC single crystal growth by sublimation

AU - Nishizawa, Shinichi

AU - Yamaguchi, H.

AU - Kato, T.

AU - Khan, M. N.

AU - Arai, K.

AU - Oyanagi, N.

AU - Kitou, Y.

AU - Bahng, W.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

AB - SiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

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