New method to obtain (001) surface-oriented polycrystalline silicon films by intensity-modulated excimer laser annealing: Molecular dynamics study

Norie Matsubara, Tomohiko Ogata, Takanori Mitani, Shinji Munetoh, Teruaki Motooka

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

We have investigated the dependence of the melting and crystal growth rates on the crystal orientation at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates, but that the growth rates substantially depend on the crystal orientation at the s/l interface. The growth rate at the (001) interface was found to be more than twice that at the (111) interface. We have also performed MD simulations of an intensity-modulated excimer laser annealing (IMELA) of Si thin films, and these results suggest that (001) surface-oriented Si without {111} stacking faults can be obtained by repetitions of melting and crystallization of amorphous Si on glass by IMELA owing to the preferential growth in the h100i direction.

元の言語英語
記事番号03B006
ジャーナルJapanese journal of applied physics
48
発行部数3 PART 3
DOI
出版物ステータス出版済み - 3 1 2009

Fingerprint

laser annealing
Excimer lasers
silicon films
Polysilicon
excimer lasers
Molecular dynamics
Melting
Annealing
molecular dynamics
Crystal orientation
Silicon
melting
silicon
Computer simulation
Stacking faults
Liquids
Amorphous silicon
Crystal growth
Interfaces (computer)
liquid-solid interfaces

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

New method to obtain (001) surface-oriented polycrystalline silicon films by intensity-modulated excimer laser annealing : Molecular dynamics study. / Matsubara, Norie; Ogata, Tomohiko; Mitani, Takanori; Munetoh, Shinji; Motooka, Teruaki.

:: Japanese journal of applied physics, 巻 48, 番号 3 PART 3, 03B006, 01.03.2009.

研究成果: ジャーナルへの寄稿記事

@article{0b37ed117a0c453d95b5d7a56f71916d,
title = "New method to obtain (001) surface-oriented polycrystalline silicon films by intensity-modulated excimer laser annealing: Molecular dynamics study",
abstract = "We have investigated the dependence of the melting and crystal growth rates on the crystal orientation at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates, but that the growth rates substantially depend on the crystal orientation at the s/l interface. The growth rate at the (001) interface was found to be more than twice that at the (111) interface. We have also performed MD simulations of an intensity-modulated excimer laser annealing (IMELA) of Si thin films, and these results suggest that (001) surface-oriented Si without {111} stacking faults can be obtained by repetitions of melting and crystallization of amorphous Si on glass by IMELA owing to the preferential growth in the h100i direction.",
author = "Norie Matsubara and Tomohiko Ogata and Takanori Mitani and Shinji Munetoh and Teruaki Motooka",
year = "2009",
month = "3",
day = "1",
doi = "10.1143/JJAP.48.03B006",
language = "English",
volume = "48",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "3 PART 3",

}

TY - JOUR

T1 - New method to obtain (001) surface-oriented polycrystalline silicon films by intensity-modulated excimer laser annealing

T2 - Molecular dynamics study

AU - Matsubara, Norie

AU - Ogata, Tomohiko

AU - Mitani, Takanori

AU - Munetoh, Shinji

AU - Motooka, Teruaki

PY - 2009/3/1

Y1 - 2009/3/1

N2 - We have investigated the dependence of the melting and crystal growth rates on the crystal orientation at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates, but that the growth rates substantially depend on the crystal orientation at the s/l interface. The growth rate at the (001) interface was found to be more than twice that at the (111) interface. We have also performed MD simulations of an intensity-modulated excimer laser annealing (IMELA) of Si thin films, and these results suggest that (001) surface-oriented Si without {111} stacking faults can be obtained by repetitions of melting and crystallization of amorphous Si on glass by IMELA owing to the preferential growth in the h100i direction.

AB - We have investigated the dependence of the melting and crystal growth rates on the crystal orientation at solid/liquid (s/l) silicon (Si) interfaces by molecular dynamics (MD) simulations. It was found that there was no appreciable difference in the melting rates, but that the growth rates substantially depend on the crystal orientation at the s/l interface. The growth rate at the (001) interface was found to be more than twice that at the (111) interface. We have also performed MD simulations of an intensity-modulated excimer laser annealing (IMELA) of Si thin films, and these results suggest that (001) surface-oriented Si without {111} stacking faults can be obtained by repetitions of melting and crystallization of amorphous Si on glass by IMELA owing to the preferential growth in the h100i direction.

UR - http://www.scopus.com/inward/record.url?scp=77952467333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952467333&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.03B006

DO - 10.1143/JJAP.48.03B006

M3 - Article

AN - SCOPUS:77952467333

VL - 48

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 3 PART 3

M1 - 03B006

ER -