New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 引用 (Scopus)

抜粋

A new methodology to evaluate the process temperature dependence of the minority carrier lifetime has been developed. A TEG layout with p+-stripes on an n-Si substrate was designed. When all the p+n junctions are made forward, the minority carrier diffusion current flows one dimensionally into the substrate. On the other hand, for making only the one center p+n junction forward, the current spreads laterally and flows cylindrically into the substrate. By the difference in the flow path of the minority carrier diffusion, we can successfully extract the minority carrier lifetime. We applied this methodology to the evaluation of the minority carrier lifetime depending on process temperatures and confirmed the lifetime degradation for high temperature process.

元の言語英語
ホスト出版物のタイトル2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
出版者Institute of Electrical and Electronics Engineers Inc.
ページ105-106
ページ数2
ISBN(電子版)9781538667002
DOI
出版物ステータス出版済み - 10 22 2018
イベント32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018 - Honolulu, 米国
継続期間: 6 18 20186 22 2018

出版物シリーズ

名前IEEE Symposium on VLSI Circuits, Digest of Technical Papers
2018-June

その他

その他32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
米国
Honolulu
期間6/18/186/22/18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • これを引用

    Kakushima, K., Hoshii, T., Watanabe, M., Shizyo, N., Furukawa, K., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Numasawa, Y., Ogura, A., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., & Iwai, H. (2018). New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. : 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018 (pp. 105-106). [8502399] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; 巻数 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIC.2018.8502399