抄録
This paper describes a new module structure for 40-Gbit/s class ICs. This structure can eliminate cavity resonance in the package and excitation of parasitic propagation modes in RF feedthroughs. Additionally, the design makes use of flip-chip technology to minimize the parasitic reactance that can occur at interconnections between chips and substrates. These features make module operation stable at frequencies beyond 40 GHz. We also demonstrate a DC-to-40-GHz distributed amplifier IC module that uses this new technology.
本文言語 | 英語 |
---|---|
ページ(範囲) | 243-246 |
ページ数 | 4 |
ジャーナル | IEEE MTT-S International Microwave Symposium Digest |
巻 | 1 |
出版ステータス | 出版済み - 1月 1 1996 |
外部発表 | はい |
イベント | Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA 継続期間: 6月 17 1996 → 6月 21 1996 |
!!!All Science Journal Classification (ASJC) codes
- 放射線
- 凝縮系物理学
- 電子工学および電気工学