New photoresist materials for 157-nm lithography. Poly[vinylsulfonyl fluoride-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] partially protected with tert-butoxycarbonyl

Tsuyohiko Fujigaya, Yuji Sibasaki, Shinji Ando, Shinji Kishimura, Masayoshi Endo, Masaru Sasago, Mitsuru Ueda

研究成果: Contribution to journalArticle査読

20 被引用数 (Scopus)

抄録

Our molecular orbital calculations predicted excellent transparencies of molecules having sulfonyl fluoride groups in the vacuum ultraviolet (VUV) region. An optical density (OD) measurement of poly(vinylsulfonyl fluoride) [poly(VSF)] prepared by free radical polymerization of VSF clearly supported this calculation (OD = 2.1μm-1 at 157 nm). A new copolymer, poly [(VSF)40-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)styrene (HFISt)60] [poly(VSF40-co-HFISt60)] prepared by free radical copolymerization of VSF and HFIST showed good transparency (OD = 2.4μm-1) as well. Poly(VSF40-co-HFISt22-co-tert-butoxycarbonyl HFISt38) (OD = 2.8μm-1) was prepared from poly(VSF40-co-HFISt60) and di-tert-butyl dicarbonate in the presence of 4-(dimethylamino)pyridine (DMAP). A resist film consisting of poly(VSF40-co-HFISt22-co-tert-Boc HFISt38) and 5 wt % triphenylsulfonium triflate showed a sensitivity of 7.2 mJ cm-2 and a contrast of 3.1 when a 150-nm-thick film prebaked at 100 °C for 1 min was exposed to 157-nm laser, postbaked at 130 °C for 1 min, and developed with a 2.38 wt % tetramethylammonium hydroxide (TMAH) aqueous solution.

本文言語英語
ページ(範囲)1512-1517
ページ数6
ジャーナルChemistry of Materials
15
7
DOI
出版ステータス出版済み - 4 8 2003
外部発表はい

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

フィンガープリント 「New photoresist materials for 157-nm lithography. Poly[vinylsulfonyl fluoride-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] partially protected with tert-butoxycarbonyl」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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