New Positive EB Resist with Strong Resistance to Plasma Damage

Kazuo Yamaguchi, Hiroyuki Ozaki, Akira Hirao, Nobumitsu Hirose, Yuuichi Harada, Yoshinori Uzawa, Matsuo Sekine, Shigeru Yoshimori, Mitsuo Kawamura

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

抄録

Copolymers of methyl methacrylate (MMA) and 3–triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF3 plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma–irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross–linking structure based on the Si–O–Si linkage.

元の言語英語
ページ(範囲)L33-L34
ジャーナルJournal of the Electrochemical Society
139
発行部数3
DOI
出版物ステータス出版済み - 3 1992

Fingerprint

Positrons
Methylmethacrylate
Electron beams
Methacrylates
Copolymers
Plasma etching
Plasmas
Crosslinking
Solubility

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

これを引用

Yamaguchi, K., Ozaki, H., Hirao, A., Hirose, N., Harada, Y., Uzawa, Y., ... Kawamura, M. (1992). New Positive EB Resist with Strong Resistance to Plasma Damage. Journal of the Electrochemical Society, 139(3), L33-L34. https://doi.org/10.1149/1.2069330

New Positive EB Resist with Strong Resistance to Plasma Damage. / Yamaguchi, Kazuo; Ozaki, Hiroyuki; Hirao, Akira; Hirose, Nobumitsu; Harada, Yuuichi; Uzawa, Yoshinori; Sekine, Matsuo; Yoshimori, Shigeru; Kawamura, Mitsuo.

:: Journal of the Electrochemical Society, 巻 139, 番号 3, 03.1992, p. L33-L34.

研究成果: ジャーナルへの寄稿記事

Yamaguchi, K, Ozaki, H, Hirao, A, Hirose, N, Harada, Y, Uzawa, Y, Sekine, M, Yoshimori, S & Kawamura, M 1992, 'New Positive EB Resist with Strong Resistance to Plasma Damage', Journal of the Electrochemical Society, 巻. 139, 番号 3, pp. L33-L34. https://doi.org/10.1149/1.2069330
Yamaguchi, Kazuo ; Ozaki, Hiroyuki ; Hirao, Akira ; Hirose, Nobumitsu ; Harada, Yuuichi ; Uzawa, Yoshinori ; Sekine, Matsuo ; Yoshimori, Shigeru ; Kawamura, Mitsuo. / New Positive EB Resist with Strong Resistance to Plasma Damage. :: Journal of the Electrochemical Society. 1992 ; 巻 139, 番号 3. pp. L33-L34.
@article{449766aa812846038a6853d72c496933,
title = "New Positive EB Resist with Strong Resistance to Plasma Damage",
abstract = "Copolymers of methyl methacrylate (MMA) and 3–triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol{\%} ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF3 plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma–irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross–linking structure based on the Si–O–Si linkage.",
author = "Kazuo Yamaguchi and Hiroyuki Ozaki and Akira Hirao and Nobumitsu Hirose and Yuuichi Harada and Yoshinori Uzawa and Matsuo Sekine and Shigeru Yoshimori and Mitsuo Kawamura",
year = "1992",
month = "3",
doi = "10.1149/1.2069330",
language = "English",
volume = "139",
pages = "L33--L34",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "3",

}

TY - JOUR

T1 - New Positive EB Resist with Strong Resistance to Plasma Damage

AU - Yamaguchi, Kazuo

AU - Ozaki, Hiroyuki

AU - Hirao, Akira

AU - Hirose, Nobumitsu

AU - Harada, Yuuichi

AU - Uzawa, Yoshinori

AU - Sekine, Matsuo

AU - Yoshimori, Shigeru

AU - Kawamura, Mitsuo

PY - 1992/3

Y1 - 1992/3

N2 - Copolymers of methyl methacrylate (MMA) and 3–triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF3 plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma–irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross–linking structure based on the Si–O–Si linkage.

AB - Copolymers of methyl methacrylate (MMA) and 3–triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to CBrF3 plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma–irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross–linking structure based on the Si–O–Si linkage.

UR - http://www.scopus.com/inward/record.url?scp=0026839060&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026839060&partnerID=8YFLogxK

U2 - 10.1149/1.2069330

DO - 10.1149/1.2069330

M3 - Article

AN - SCOPUS:0026839060

VL - 139

SP - L33-L34

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 3

ER -