New self-aligned process for fabrication of microemitter arrays using selective etching of silicon

Tanemasa Asano; Junji Yasuda

New self-aligned process for fabrication of microemitter arrays using selective etching of silicon

Tanemasa Asano, Junji Yasuda

研究成果: Chapter in Book/Report/Conference proceeding › Other chapter contribution

抄録

Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi₂ emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10 V is demonstrated.

本文言語	英語
ホスト出版物のタイトル	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
編集者	Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
ページ	6347-6695
ページ数	349
巻	35
版	12 B
出版ステータス	出版済み - 12 1996
外部発表	はい
イベント	Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn 継続期間: 7 8 1996 → 7 11 1996

その他

その他	Proceedings of the 1996 9th International MicroProcess Conference, MPC'96
City	Kyushu, Jpn
Period	7/8/96 → 7/11/96

All Science Journal Classification (ASJC) codes

Engineering(all)

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引用スタイル

New self-aligned process for fabrication of microemitter arrays using selective etching of silicon. / Asano, Tanemasa; Yasuda, Junji.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. ed. / Y. Aoyagi; N. Atoda; T. Fukui; M. Komuro; M. Kotera; al et al. Vol. 35 12 B. ed. 1996. p. 6347-6695.

研究成果: Chapter in Book/Report/Conference proceeding › Other chapter contribution

Asano, T & Yasuda, J 1996, New self-aligned process for fabrication of microemitter arrays using selective etching of silicon. in Y Aoyagi, N Atoda, T Fukui, M Komuro, M Kotera & A et al (eds), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 12 B edn, vol. 35, pp. 6347-6695, Proceedings of the 1996 9th International MicroProcess Conference, MPC'96, Kyushu, Jpn, 7/8/96.

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abstract = "Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10 V is demonstrated.",

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