New self-aligned process for fabrication of microemitter arrays using selective etching of silicon

Tanemasa Asano, Junji Yasuda

研究成果: Chapter in Book/Report/Conference proceedingOther chapter contribution

抄録

Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10 V is demonstrated.

本文言語英語
ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
編集者Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
ページ6347-6695
ページ数349
35
12 B
出版ステータス出版済み - 12 1996
外部発表はい
イベントProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
継続期間: 7 8 19967 11 1996

その他

その他Proceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period7/8/967/11/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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