NEW THERMOSTABLE OHMIC CONTACT TO n-GaAs-n** plus -Si/n-GaAs STRUCTURE.

Tanemasa Asano, Tsuyoshi Fukada, Seijiro Furukawa, Hiroshi Ishiwara

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

n** plus -Si has been found to be an ohmic contact to n-GaAs. The n** plus -Si films were formed on n-GaAs by conventional vacuum evaporation and P** plus ion implantation. Even after annealing at 850 degree C, the surface and the interface of the n** plus -Si/n-GaAs structure were uniform and ohmic contact characteristics were observed. By using Al as electrodes on the n** plus -Si film, the contact resistivity of about 1. 5 OMEGA multiplied by (times) mm was obtained, which was only three times higher than that of the conventional Au-Ge alloyed contact. MESFETs were fabricated and the Al/n** plus -Si contact to n-GaAs was found to be stable at least up to 500 degree C.

本文言語英語
ホスト出版物のタイトルConference on Solid State Devices and Materials
出版社Japan Soc of Applied Physics
ページ67-70
ページ数4
ISBN(印刷版)4930813212
出版ステータス出版済み - 12 1 1987
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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