Ni-imprint induced solid-phase crystallization in Si1-xGe x (x: 0-1) on insulator

Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Tanemasa Asano, Masanobu Miyao

研究成果: Contribution to journalArticle査読

63 被引用数 (Scopus)

抄録

Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.

本文言語英語
論文番号042111
ジャーナルApplied Physics Letters
91
4
DOI
出版ステータス出版済み - 8 3 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Ni-imprint induced solid-phase crystallization in Si<sub>1-x</sub>Ge <sub>x</sub> (x: 0-1) on insulator」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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