Ni-imprint induced solid-phase crystallization in Si1-xGe x (x: 0-1) on insulator

Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Tanemasa Asano, Masanobu Miyao

研究成果: Contribution to journalArticle査読

63 被引用数 (Scopus)


Position control of solid-phase crystallization in the amorphous Si1-x Gex (x: 0-1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2-20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions (∼2 μm) were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.

ジャーナルApplied Physics Letters
出版ステータス出版済み - 8 3 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Ni-imprint induced solid-phase crystallization in Si<sub>1-x</sub>Ge <sub>x</sub> (x: 0-1) on insulator」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。