Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen

Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

We report nitrogen (N) doping of 4H-SiC by KrF excimer laser irradiation in liquid N2. In comparison to phosphorus (P) doping performed using phosphoric acid solution, the laser N doping can introduce N atoms deeper (∼1 μm depth) into the 4H-SiC, which results in reduction of doped layer resistance by approximately 3 orders of magnitude. Doping is shown to proceed by the thermal diffusion of species, while loss of the host material from the surface by ablation takes place at the same time. Chemical analysis shows that high density carbon (C) vacancies are generated in the N doped region, which suggests enhanced diffusion of N assisted by the presence of C vacancies. pn junction diodes are formed by using the N doping technique. Turn-on voltage is ∼-3 V, which is reasonable for a pn junction diode of 4H-SiC.

元の言語英語
記事番号04DP02
ジャーナルJapanese Journal of Applied Physics
54
発行部数4
DOI
出版物ステータス出版済み - 4 1 2015

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Excimer lasers
Liquid nitrogen
Laser beam effects
liquid nitrogen
excimer lasers
Doping (additives)
Nitrogen
nitrogen
irradiation
junction diodes
Vacancies
Diodes
Thermal diffusion
phosphoric acid
Phosphoric acid
thermal diffusion
Ablation
chemical analysis
ablation
phosphorus

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen. / Ikeda, Akihiro; Marui, Daichi; Ikenoue, Hiroshi; Asano, Tanemasa.

:: Japanese Journal of Applied Physics, 巻 54, 番号 4, 04DP02, 01.04.2015.

研究成果: ジャーナルへの寄稿記事

@article{de5d8c3c71094cba85ffbcbd94241a1a,
title = "Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen",
abstract = "We report nitrogen (N) doping of 4H-SiC by KrF excimer laser irradiation in liquid N2. In comparison to phosphorus (P) doping performed using phosphoric acid solution, the laser N doping can introduce N atoms deeper (∼1 μm depth) into the 4H-SiC, which results in reduction of doped layer resistance by approximately 3 orders of magnitude. Doping is shown to proceed by the thermal diffusion of species, while loss of the host material from the surface by ablation takes place at the same time. Chemical analysis shows that high density carbon (C) vacancies are generated in the N doped region, which suggests enhanced diffusion of N assisted by the presence of C vacancies. pn junction diodes are formed by using the N doping technique. Turn-on voltage is ∼-3 V, which is reasonable for a pn junction diode of 4H-SiC.",
author = "Akihiro Ikeda and Daichi Marui and Hiroshi Ikenoue and Tanemasa Asano",
year = "2015",
month = "4",
day = "1",
doi = "10.7567/JJAP.54.04DP02",
language = "English",
volume = "54",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "4",

}

TY - JOUR

T1 - Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen

AU - Ikeda, Akihiro

AU - Marui, Daichi

AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

PY - 2015/4/1

Y1 - 2015/4/1

N2 - We report nitrogen (N) doping of 4H-SiC by KrF excimer laser irradiation in liquid N2. In comparison to phosphorus (P) doping performed using phosphoric acid solution, the laser N doping can introduce N atoms deeper (∼1 μm depth) into the 4H-SiC, which results in reduction of doped layer resistance by approximately 3 orders of magnitude. Doping is shown to proceed by the thermal diffusion of species, while loss of the host material from the surface by ablation takes place at the same time. Chemical analysis shows that high density carbon (C) vacancies are generated in the N doped region, which suggests enhanced diffusion of N assisted by the presence of C vacancies. pn junction diodes are formed by using the N doping technique. Turn-on voltage is ∼-3 V, which is reasonable for a pn junction diode of 4H-SiC.

AB - We report nitrogen (N) doping of 4H-SiC by KrF excimer laser irradiation in liquid N2. In comparison to phosphorus (P) doping performed using phosphoric acid solution, the laser N doping can introduce N atoms deeper (∼1 μm depth) into the 4H-SiC, which results in reduction of doped layer resistance by approximately 3 orders of magnitude. Doping is shown to proceed by the thermal diffusion of species, while loss of the host material from the surface by ablation takes place at the same time. Chemical analysis shows that high density carbon (C) vacancies are generated in the N doped region, which suggests enhanced diffusion of N assisted by the presence of C vacancies. pn junction diodes are formed by using the N doping technique. Turn-on voltage is ∼-3 V, which is reasonable for a pn junction diode of 4H-SiC.

UR - http://www.scopus.com/inward/record.url?scp=84926305895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926305895&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.04DP02

DO - 10.7567/JJAP.54.04DP02

M3 - Article

AN - SCOPUS:84926305895

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4

M1 - 04DP02

ER -