Non-Stoichiometry and Conduction Properties of SrxCeO3-α Oxides

Tetsuo Shimura, Guilin Ma, Hiroshige Matsumoto, Hiroyasu Iwahara

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

The influence of non-stoichiometry, deviation of Sr/Ce from unity, on conduction properties in SrCeO3 was investigated and compared with that in BaCeO3. In SrxCeO3-α, single phase of samples was confirmed for x = 0.98, 1.00, 1.02, 1.05 and 1.10. At x≤1.0, conduction was electronic in hydrogen and ionic in air. On the other hand, at x>1.0, the dominant conduction carriers were protons in hydrogen and electron holes in air. The dependence of conduction characteristic on x in SrxCeO3-α was similar to that in BaxCeO3-α, although there was small quantitative difference between two systems. This means that the A/Ce non-stoichiometry results in the similar type of defect structure in SrxCeO3-α and in BaxCeO3-α. In Sr- or Ba-poor region, the partial substitution of excess Ce for A-site in ABO3 perovskite may occur. At x > 1.0, the substitution of excess Sr or Ba for B-site may happen and this substitution leads to the introduction of the oxide ion vacancies in the lattice.

元の言語英語
ページ(範囲)439-443
ページ数5
ジャーナルElectrochemistry
68
発行部数6
出版物ステータス出版済み - 6 2000
外部発表Yes

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Oxides
Substitution reactions
Hydrogen
Defect structures
Air
Crystal lattices
Perovskite
Vacancies
Protons
Ions
Electrons
perovskite

All Science Journal Classification (ASJC) codes

  • Electrochemistry

これを引用

Non-Stoichiometry and Conduction Properties of SrxCeO3-α Oxides. / Shimura, Tetsuo; Ma, Guilin; Matsumoto, Hiroshige; Iwahara, Hiroyasu.

:: Electrochemistry, 巻 68, 番号 6, 06.2000, p. 439-443.

研究成果: ジャーナルへの寄稿記事

Shimura, T, Ma, G, Matsumoto, H & Iwahara, H 2000, 'Non-Stoichiometry and Conduction Properties of SrxCeO3-α Oxides', Electrochemistry, 巻. 68, 番号 6, pp. 439-443.
Shimura, Tetsuo ; Ma, Guilin ; Matsumoto, Hiroshige ; Iwahara, Hiroyasu. / Non-Stoichiometry and Conduction Properties of SrxCeO3-α Oxides. :: Electrochemistry. 2000 ; 巻 68, 番号 6. pp. 439-443.
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abstract = "The influence of non-stoichiometry, deviation of Sr/Ce from unity, on conduction properties in SrCeO3 was investigated and compared with that in BaCeO3. In SrxCeO3-α, single phase of samples was confirmed for x = 0.98, 1.00, 1.02, 1.05 and 1.10. At x≤1.0, conduction was electronic in hydrogen and ionic in air. On the other hand, at x>1.0, the dominant conduction carriers were protons in hydrogen and electron holes in air. The dependence of conduction characteristic on x in SrxCeO3-α was similar to that in BaxCeO3-α, although there was small quantitative difference between two systems. This means that the A/Ce non-stoichiometry results in the similar type of defect structure in SrxCeO3-α and in BaxCeO3-α. In Sr- or Ba-poor region, the partial substitution of excess Ce for A-site in ABO3 perovskite may occur. At x > 1.0, the substitution of excess Sr or Ba for B-site may happen and this substitution leads to the introduction of the oxide ion vacancies in the lattice.",
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N2 - The influence of non-stoichiometry, deviation of Sr/Ce from unity, on conduction properties in SrCeO3 was investigated and compared with that in BaCeO3. In SrxCeO3-α, single phase of samples was confirmed for x = 0.98, 1.00, 1.02, 1.05 and 1.10. At x≤1.0, conduction was electronic in hydrogen and ionic in air. On the other hand, at x>1.0, the dominant conduction carriers were protons in hydrogen and electron holes in air. The dependence of conduction characteristic on x in SrxCeO3-α was similar to that in BaxCeO3-α, although there was small quantitative difference between two systems. This means that the A/Ce non-stoichiometry results in the similar type of defect structure in SrxCeO3-α and in BaxCeO3-α. In Sr- or Ba-poor region, the partial substitution of excess Ce for A-site in ABO3 perovskite may occur. At x > 1.0, the substitution of excess Sr or Ba for B-site may happen and this substitution leads to the introduction of the oxide ion vacancies in the lattice.

AB - The influence of non-stoichiometry, deviation of Sr/Ce from unity, on conduction properties in SrCeO3 was investigated and compared with that in BaCeO3. In SrxCeO3-α, single phase of samples was confirmed for x = 0.98, 1.00, 1.02, 1.05 and 1.10. At x≤1.0, conduction was electronic in hydrogen and ionic in air. On the other hand, at x>1.0, the dominant conduction carriers were protons in hydrogen and electron holes in air. The dependence of conduction characteristic on x in SrxCeO3-α was similar to that in BaxCeO3-α, although there was small quantitative difference between two systems. This means that the A/Ce non-stoichiometry results in the similar type of defect structure in SrxCeO3-α and in BaxCeO3-α. In Sr- or Ba-poor region, the partial substitution of excess Ce for A-site in ABO3 perovskite may occur. At x > 1.0, the substitution of excess Sr or Ba for B-site may happen and this substitution leads to the introduction of the oxide ion vacancies in the lattice.

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