Non-thermal equilibrium formation of Ge1-xSnx (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing

K. Moto, R. Matsumura, H. Chikita, Taizoh Sadoh, Hiroshi Ikenoue, M. Miyao

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

To realize high-speed thin film transistors, we investigated formation of Ge1-xSnx (0蠆x蠆0.2) crystals on quartz by pulsed laser annealing. The process-window necessary for crystallization was found to be significantly expanded by introducing Sn, i.e., 16 mJ/cm2 for Ge, ∼130 mJ/cm2 for GeSn. Moreover, Ge0.8Sn0.2 samples had high substitutional Sn concentration (∼7%) after the growth. These results are expected to be useful to realize highspeed thin film transistors and multi-functional devices.

本文言語英語
ホスト出版物のタイトルSemiconductors, Dielectrics, and Metals for Nanoelectronics 13
編集者S. Kar, D. Misra, K. Kita, D. Landheer
出版社Electrochemical Society Inc.
ページ297-300
ページ数4
5
ISBN(電子版)9781607685395
DOI
出版ステータス出版済み - 1 1 2015
イベントSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting - Phoenix, 米国
継続期間: 10 11 201510 15 2015

出版物シリーズ

名前ECS Transactions
番号5
69
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

その他

その他Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting
Country米国
CityPhoenix
Period10/11/1510/15/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

フィンガープリント 「Non-thermal equilibrium formation of Ge<sub>1-x</sub>Sn<sub>x</sub> (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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