We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscale mechanisms in NiO resistive memory switching but also next-generation nanoscale nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.
!!!All Science Journal Classification (ASJC) codes
- 化学 (全般)