Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

Yuya Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi, Tetsuya Yamada, Dechen Xu, Masanobu Shibata, Daisuke Matsumura, Yuya Hayashi, Mohd Syamsul, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

研究成果: ジャーナルへの寄稿学術誌査読

109 被引用数 (Scopus)

抄録

Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.

本文言語英語
論文番号7837668
ページ(範囲)363-366
ページ数4
ジャーナルIEEE Electron Device Letters
38
3
DOI
出版ステータス出版済み - 3月 2017
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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