NO2 sensing properties of WO3 gate-fitted FET device

Seiji Nakata, Kengo Shimanoe, Norio Miura, Noboru Yamazoe

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

抄録

A field effect transistor (FET) device fitted with a WO3 layer over the gate area exhibited almost ideal FET behavior at 150 and 180°C in air containing various concentrations of NO2. Under the conditions of fixed source-drain voltage (3.0 V) and fixed drain current (450 μA), the gate-source voltage (VGS) was found to increase linearly with an increase in the logarithm of NO2 concentration over the range of several tens to 700 ppb NO2, proving its potentiality to work as an environmental NO2 sensor. However the times of 90%-response and -recovery to switching-on and -off 50 ppb NO2 were as long as 10 and 25 min even at 180°C, respectively. Cross sensitivity test revealed that the device was totally insensitive to CO2, but rather sensitive to NO. Water vapor was found to give a serious disturbance to the device: The VGS response to NO2 as well as its dependence on NO2 concentration changed with a change in relative humidity.

元の言語英語
ページ(範囲)503-507
ページ数5
ジャーナルElectrochemistry
71
発行部数6
出版物ステータス出版済み - 6 1 2003

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Gates (transistor)
Field effect transistors
Drain current
Steam
Electric potential
Water vapor
Atmospheric humidity
Recovery
Sensors
Air

All Science Journal Classification (ASJC) codes

  • Electrochemistry

これを引用

Nakata, S., Shimanoe, K., Miura, N., & Yamazoe, N. (2003). NO2 sensing properties of WO3 gate-fitted FET device. Electrochemistry, 71(6), 503-507.

NO2 sensing properties of WO3 gate-fitted FET device. / Nakata, Seiji; Shimanoe, Kengo; Miura, Norio; Yamazoe, Noboru.

:: Electrochemistry, 巻 71, 番号 6, 01.06.2003, p. 503-507.

研究成果: ジャーナルへの寄稿記事

Nakata, S, Shimanoe, K, Miura, N & Yamazoe, N 2003, 'NO2 sensing properties of WO3 gate-fitted FET device', Electrochemistry, 巻. 71, 番号 6, pp. 503-507.
Nakata S, Shimanoe K, Miura N, Yamazoe N. NO2 sensing properties of WO3 gate-fitted FET device. Electrochemistry. 2003 6 1;71(6):503-507.
Nakata, Seiji ; Shimanoe, Kengo ; Miura, Norio ; Yamazoe, Noboru. / NO2 sensing properties of WO3 gate-fitted FET device. :: Electrochemistry. 2003 ; 巻 71, 番号 6. pp. 503-507.
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