Note on the analysis of DLTS and C2-DLTS

Hajime Tomokage, Hiroshi Nakashima, Kimio Hashimoto

研究成果: Contribution to journalArticle査読

13 被引用数 (Scopus)

抄録

The difference in the peak temperatures of DLTS and C2-DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C2-DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great effect on the peak temperatures of DLTS and C2-DLTS. These phenomena appear in DLTS and C2-DLTS measurements on Au-doped Si p+n diodes. It is necessary to use C2-DLTS together with DLTS in the study of deep impurities in semiconductors.

本文言語英語
ページ(範囲)67-70
ページ数4
ジャーナルJapanese Journal of Applied Physics
21
1 R
DOI
出版ステータス出版済み - 1 1982

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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