Note on the analysis of DLTS and C2-DLTS

Hajime Tomokage, Hiroshi Nakashima, Kimio Hashimoto

研究成果: Contribution to journalArticle査読

13 被引用数 (Scopus)


The difference in the peak temperatures of DLTS and C2-DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C2-DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great effect on the peak temperatures of DLTS and C2-DLTS. These phenomena appear in DLTS and C2-DLTS measurements on Au-doped Si p+n diodes. It is necessary to use C2-DLTS together with DLTS in the study of deep impurities in semiconductors.

ジャーナルJapanese Journal of Applied Physics
1 R
出版ステータス出版済み - 1 1982

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)


「Note on the analysis of DLTS and C<sup>2</sup>-DLTS」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。