Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

5 被引用数 (Scopus)

抄録

We report here a novel method of fabricating oxide semiconductors via a solid-phase crystallization from amorphous phase. By introducing a large amount of nitrogen atoms to the sputtering atmosphere, the amorphous phase is obtained, where the resultant films are amorphous oxynitride. Since the bonding energy is different between metal-oxygen and metal-nitrogen, solid-phase crystallization is achieved by annealing of amorphous oxynitride films in the oxidization atmosphere at adequate temperatures. The resultant oxide films are highly orientated even on quartz glass substrates and the crystallinity is higher than the films prepared by conventional sputtering deposition. The fabrication method proposed here is very promising for oxide films, especially for the oxide such as zinc oxide and indium (tin) oxide whose amorphous phase is difficult to be obtained.

本文言語英語
ホスト出版物のタイトルTENCON 2010 - 2010 IEEE Region 10 Conference
ページ998-1001
ページ数4
DOI
出版ステータス出版済み - 12 1 2010
イベント2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, 日本
継続期間: 11 21 201011 24 2010

出版物シリーズ

名前IEEE Region 10 Annual International Conference, Proceedings/TENCON

その他

その他2010 IEEE Region 10 Conference, TENCON 2010
Country日本
CityFukuoka
Period11/21/1011/24/10

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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