Nuclear reaction models responsible for simulation of neutron-induced soft errors in microelectronics

研究成果: ジャーナルへの寄稿記事

抄録

Terrestrial neutron-induced soft errors in MOSFETs from a 65 nm down to a 25 nm design rule are analyzed by means of multi-scale Monte Carlo simulation using the PHITS-HyENEXSS code system. Nuclear reaction models implemented in PHITS code are validated by comparisons with experimental data. From the analysis of calculated soft error rates, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that the high energy component from 10 MeV up to several hundreds of MeV in secondary cosmic-ray neutrons has the most significant source of soft errors regardless of design rule.

元の言語英語
ページ(範囲)254-257
ページ数4
ジャーナルNuclear Data Sheets
120
DOI
出版物ステータス出版済み - 1 1 2014

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microelectronics
nuclear reactions
neutrons
simulation
secondary cosmic rays
field effect transistors
ions
energy

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics

これを引用

Nuclear reaction models responsible for simulation of neutron-induced soft errors in microelectronics. / Watanabe, Yukinobu; Abe, S.

:: Nuclear Data Sheets, 巻 120, 01.01.2014, p. 254-257.

研究成果: ジャーナルへの寄稿記事

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abstract = "Terrestrial neutron-induced soft errors in MOSFETs from a 65 nm down to a 25 nm design rule are analyzed by means of multi-scale Monte Carlo simulation using the PHITS-HyENEXSS code system. Nuclear reaction models implemented in PHITS code are validated by comparisons with experimental data. From the analysis of calculated soft error rates, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that the high energy component from 10 MeV up to several hundreds of MeV in secondary cosmic-ray neutrons has the most significant source of soft errors regardless of design rule.",
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