Nucleation and crystal growth of Si 1-xGe x melts during rapid cooling processes: A molecular-dynamics study

Yanping Xiao, Jun Taguchi, Teruaki Motooka, Shinji Munetoh

    研究成果: ジャーナルへの寄稿学術誌査読

    3 被引用数 (Scopus)

    抄録

    To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si 1-xGe x (0 ≤ × ≤ 1) from supercooled melts, and the other is the growth rate of supercooled Si 1-xGe x melts using a crystalline Si 1-xGex seed. The incubation time is found to be minimum at approximately 0.70 T m (T m: melting temperature for Si 1-xGe x ). No nucleation was found when the temperature was higher than 0.75 T m. The crystal growth rates of Si 1-xGe x peaked between 0.90 T m and 0.94 T m for both the [100] and [111] orientations. These results suggest that 0.90 T m to 0.94 T m of Si 1-xGe x (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process.

    本文言語英語
    論文番号035601
    ジャーナルJapanese journal of applied physics
    51
    3 PART 1
    DOI
    出版ステータス出版済み - 3月 1 2012

    !!!All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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