Nucleation and crystal growth of Si 1-xGe x melts during rapid cooling processes: A molecular-dynamics study

Yanping Xiao, Jun Taguchi, Teruaki Motooka, Shinji Munetoh

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si 1-xGe x (0 ≤ × ≤ 1) from supercooled melts, and the other is the growth rate of supercooled Si 1-xGe x melts using a crystalline Si 1-xGex seed. The incubation time is found to be minimum at approximately 0.70 T m (T m: melting temperature for Si 1-xGe x ). No nucleation was found when the temperature was higher than 0.75 T m. The crystal growth rates of Si 1-xGe x peaked between 0.90 T m and 0.94 T m for both the [100] and [111] orientations. These results suggest that 0.90 T m to 0.94 T m of Si 1-xGe x (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process.

元の言語英語
記事番号035601
ジャーナルJapanese Journal of Applied Physics
51
発行部数3 PART 1
DOI
出版物ステータス出版済み - 3 2012

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Crystal growth
Molecular dynamics
crystal growth
Nucleation
nucleation
molecular dynamics
Cooling
cooling
melting
Melting
Crystalline materials
Melting point
Seed
seeds
Temperature
Computer simulation
temperature
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Nucleation and crystal growth of Si 1-xGe x melts during rapid cooling processes : A molecular-dynamics study. / Xiao, Yanping; Taguchi, Jun; Motooka, Teruaki; Munetoh, Shinji.

:: Japanese Journal of Applied Physics, 巻 51, 番号 3 PART 1, 035601, 03.2012.

研究成果: ジャーナルへの寄稿記事

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