Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Satoshi Yamada, Jun Ichi Kato, Satoru Tanaka, Ikuo Suemune, Adrian Avramescu, Yoshinobu Aoyagi, Nobuaki Teraguchi, Akira Suzuki

研究成果: ジャーナルへの寄稿学術誌査読

51 被引用数 (Scopus)

抄録

Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces, which were obtained by HCl etching at elevated temperatures prior to growth, were investigated. The surface morphology and the defect density of AlN films on such surfaces were significantly improved compared to those on as-received SiC surfaces. This is due to enhanced diffusion length and reduced incoherent boundaries at the coalescence regions of the AlN islands. AlN nuclei on the as-received SiC surface were crystallographically misaligned and thus induced incoherent boundaries at the coalescence stage, resulting in the delay of the two-dimensional growth mode transition and defect formation in AlN films.

本文言語英語
ページ(範囲)3612-3614
ページ数3
ジャーナルApplied Physics Letters
78
23
DOI
出版ステータス出版済み - 6月 4 2001
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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