Nucleation and growth mode of GaN on vicinal SiC surfaces

Masato Ebihara, Tanaka Satoru, Ikuo Suemune

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

Nucleation and growth mode of GaN during molecular beam epitaxy on vicinal SiC surfaces, consisting of a pair of self-ordered periodic nanofacets, (0001) and (112̄n), are investigated. Well-defined surface nanostructures on SiC enable us to understand growth physics. Here, the Ga-adsorption process on SiC is noticed in particular, and its effects on initial GaN growth stages are examined using reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). With the presence of a Ga-adlayer on a SiC surface, GaN nucleation occurs at step sites on (112̄n) facets, followed by step-flow growth. In contrast, without a Ga-adlayer, GaN nucleation is predominantly observed on (0001) terraces. Interestingly, the crystal structure of the resultant film differs in each case from a typical wultzite (2H) to a 6H-polytype, without and with a Ga-adlayer, respectively.

元の言語英語
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
46
発行部数12-16
DOI
出版物ステータス出版済み - 4 13 2007

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Nucleation
nucleation
Reflection high energy electron diffraction
Molecular beam epitaxy
high energy electrons
flat surfaces
Atomic force microscopy
Nanostructures
molecular beam epitaxy
Physics
electron diffraction
Crystal structure
atomic force microscopy
Adsorption
crystal structure
physics
adsorption

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Nucleation and growth mode of GaN on vicinal SiC surfaces. / Ebihara, Masato; Satoru, Tanaka; Suemune, Ikuo.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 46, 番号 12-16, 13.04.2007.

研究成果: ジャーナルへの寄稿記事

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