Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion

Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

研究成果: Contribution to journalArticle査読

抄録

The effects of local Ge insertion on the solid-phase crystallization (SPC) of a-Si films have been investigated. Three types of stacked structures, i.e., (a) a-Si/a-Ge/a-Si/SiO<SUB>2</SUB>, (b) a-Si/a-Ge/SiO<SUB>2</SUB>, and (c) SiO<SUB>2</SUB>/a-Ge/a-Si/SiO<SUB>2</SUB>, were annealed at 600°C. For structure (a) with thin (∼5 nm) Ge films, Ge atoms completely diffused into both sides of a-Si regions, and SPC was not enhanced. However, when Ge thickness was increased to more than 10 nm, Ge atoms were localized. Such localization became significant for structures (b) and (c) even for samples with thin Ge films. In addition, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in Ge layers, and then propagated into a-Si layers. Therefore, interface-nucleation-driven SPC becomes possible using structures (b) and (c). This will be a useful tool in achieving oriented Si growth on SiO<SUB>2</SUB>.
本文言語英語
ページ(範囲)1901-1904
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
4
DOI
出版ステータス出版済み - 4 30 2004

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