Nucleation-controlled metal-induced lateral crystallization of amorphous Si1-xGex with whole Ge fraction on insulator

Taizoh Sadoh, Kaoru Toko, Hiroshi Kanno, Shunji Masumori, Masaru Itakura, Noriyuki Kuwano, Masanobu Miyao

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

The effects of Ge fraction and annealing temperature on the metal-induced lateral crystallization (MILC) of amorphous SiGe films on an insulator have been investigated. It was shown that the progress of the MILC of amorphous SiGe was suppressed by spontaneous nucleation, which was accelerated with increases in Ge fraction and annealing temperature. Thus, MILC could not proceed for amorphous SiGe with high Ge fractions (>70%) at high temperatures (>500 °C). Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400°C). As a result, the MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0-100%), and large polycrystalline silicon-germanium (poly-SiGe) regions (>20μm) could be realized for even high Ge fractions (>70%). Transmission electron microscopy suggested that the mechanism of MILC of amorphous SiGe (a-SiGe) with medium and high Ge fractions (>40%) is different from that of a-Si.

元の言語英語
ページ(範囲)1876-1879
ページ数4
ジャーナルJapanese Journal of Applied Physics
47
発行部数3 PART 2
DOI
出版物ステータス出版済み - 3 21 2008

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Nucleation
Crystallization
insulators
nucleation
crystallization
Annealing
Metals
metals
annealing
Temperature
temperature
Transmission electron microscopy
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Nucleation-controlled metal-induced lateral crystallization of amorphous Si1-xGex with whole Ge fraction on insulator. / Sadoh, Taizoh; Toko, Kaoru; Kanno, Hiroshi; Masumori, Shunji; Itakura, Masaru; Kuwano, Noriyuki; Miyao, Masanobu.

:: Japanese Journal of Applied Physics, 巻 47, 番号 3 PART 2, 21.03.2008, p. 1876-1879.

研究成果: ジャーナルへの寄稿記事

Sadoh, Taizoh ; Toko, Kaoru ; Kanno, Hiroshi ; Masumori, Shunji ; Itakura, Masaru ; Kuwano, Noriyuki ; Miyao, Masanobu. / Nucleation-controlled metal-induced lateral crystallization of amorphous Si1-xGex with whole Ge fraction on insulator. :: Japanese Journal of Applied Physics. 2008 ; 巻 47, 番号 3 PART 2. pp. 1876-1879.
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abstract = "The effects of Ge fraction and annealing temperature on the metal-induced lateral crystallization (MILC) of amorphous SiGe films on an insulator have been investigated. It was shown that the progress of the MILC of amorphous SiGe was suppressed by spontaneous nucleation, which was accelerated with increases in Ge fraction and annealing temperature. Thus, MILC could not proceed for amorphous SiGe with high Ge fractions (>70{\%}) at high temperatures (>500 °C). Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400°C). As a result, the MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0-100{\%}), and large polycrystalline silicon-germanium (poly-SiGe) regions (>20μm) could be realized for even high Ge fractions (>70{\%}). Transmission electron microscopy suggested that the mechanism of MILC of amorphous SiGe (a-SiGe) with medium and high Ge fractions (>40{\%}) is different from that of a-Si.",
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AU - Sadoh, Taizoh

AU - Toko, Kaoru

AU - Kanno, Hiroshi

AU - Masumori, Shunji

AU - Itakura, Masaru

AU - Kuwano, Noriyuki

AU - Miyao, Masanobu

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