Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation

Yanping Xiao, Teruaki Motooka, Ryo Teranishi, Shinji Munetoh

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

The recrystallization processes of supercooled Si and Ge melts were investigated using molecular-dynamics (MD) simulations. The incubation time Ti defined as the cooling time period to obtain 10% recrystallization of supercooled melts is found to be minimum when temperature is around 0.7Tm (Tm: melting temperature for both of crystal Si and Ge). The MD results suggest that 0.7Tm is an optimum annealing temperature to enhance the nucleation rate in the growth processes of Si and Ge films.

元の言語英語
ページ(範囲)103-105
ページ数3
ジャーナルJournal of Crystal Growth
362
発行部数1
DOI
出版物ステータス出版済み - 1 1 2013

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Molecular dynamics
Nucleation
nucleation
molecular dynamics
Cooling
cooling
Computer simulation
Melting point
simulation
Annealing
Temperature
Crystals
temperature
melting
annealing
crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation. / Xiao, Yanping; Motooka, Teruaki; Teranishi, Ryo; Munetoh, Shinji.

:: Journal of Crystal Growth, 巻 362, 番号 1, 01.01.2013, p. 103-105.

研究成果: ジャーナルへの寄稿記事

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