Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass: A molecular-dynamics study

Shinji Munetoh, Takanori Mitani, Takahide Kuranaga, Teruaki Motooka

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing the thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that the nucleation predominantly occurred in the u-Si region as judged by the coordination numbers and diffusion constants of atoms in the region, The results suggest that the nucleation occurs in the unmelted residual a-Si region during the laser irradiation and then the crystal growth proceeds toward liquid Si region under the near-complete melting condition.

本文言語英語
ホスト出版物のタイトルGroup IV Semiconductor Nanostructures-2006
ページ159-164
ページ数6
出版ステータス出版済み - 7 4 2007
イベント2006 MRS Fall Meeting - Boston, MA, 米国
継続期間: 11 27 200612 1 2006

出版物シリーズ

名前Materials Research Society Symposium Proceedings
958
ISSN(印刷版)0272-9172

その他

その他2006 MRS Fall Meeting
Country米国
CityBoston, MA
Period11/27/0612/1/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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