Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process

S. Nakano, B. Gao, K. Kakimoto

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

In this study, we investigate the influence of thermal stress on the dislocation density and residual stress in GaN single crystals by numerical analysis. The results show that the dislocation density increases, but the thermal stress does not decrease, and the residual stress increases throughout the cooling process. The reason for this phenomenon is that the dislocation density is higher at the periphery of the crystal and distribution of dislocation density in the crystal is inhomogeneous. Then, the increase of dislocation does not allow the thermal stress on the entire crystal to relax.

本文言語英語
ページ(範囲)839-844
ページ数6
ジャーナルJournal of Crystal Growth
468
DOI
出版ステータス出版済み - 6 15 2017
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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