Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor

Shin Ichi Nishizawa, Michel Pons

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

10 被引用数 (Scopus)

抄録

Growth, etching, and doping features of SiC-CVD in a horizontal hot-wall reactor were numerically analyzed using the improved heterogeneous model. The improved model was able to explain the growth and etching features accurately. In addition, we propose the surface flux, surface carbon and silicon concentration, and its ratio as the universal parameter of the SiC-CVD process. Concerning doping features, the improved model showed that nitrogen and aluminum doping incorporation could be explained by the site competition model, while taking into account the amount of surface silicon and surface carbon, respectively.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
出版社Trans Tech Publications Ltd
ページ53-56
ページ数4
ISBN(印刷版)0878499636, 9780878499632
DOI
出版ステータス出版済み - 2005
外部発表はい
イベント5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, イタリア
継続期間: 8 31 20049 4 2004

出版物シリーズ

名前Materials Science Forum
483-485
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

その他

その他5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
国/地域イタリア
CityBologna
Period8/31/049/4/04

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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