Numerical analysis of Mc-Si crystal growth

Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X. J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

6 引用 (Scopus)

抜粋

The content and uniformity of impurities and precipitates have an important role in the efficiency of solar cells made of multicrystalline silicon. We developed a transient global model of heat and mass transfer for directional solidification for multicrystalline silicon and a dynamic model of SiC particles and silicon nitride precipitation in molten silicon based phase diagrams. Computations were carried out to clarify the distributions of carbon, nitrogen and oxygen based on segregation and the particle formation in molten silicon during a directional solidification process. It was shown that the content of SiC precipitated in solidified ingots increases as a function of the fraction solidified. It was also clarified from the results that Si2N 2O was first formed near the melt-crystal interface, since oxygen concentration in the melt decreases and nitrogen concentration in the melt increases with solidification of the molten silicon. Si3N4 was formed after Si2N2O had been formed.

元の言語英語
ホスト出版物のタイトルGettering and Defect Engineering in Semiconductor Technology XIII
ホスト出版物のサブタイトルGADEST 2009
出版者Trans Tech Publications Ltd
ページ193-198
ページ数6
ISBN(印刷物)3908451744, 9783908451747
DOI
出版物ステータス出版済み - 1 1 2009
イベント13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 - Berlin, ドイツ
継続期間: 9 26 200910 2 2009

出版物シリーズ

名前Solid State Phenomena
156-158
ISSN(印刷物)1012-0394

その他

その他13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009
ドイツ
Berlin
期間9/26/0910/2/09

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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  • これを引用

    Kakimoto, K., Matsuo, H., Hisamatsu, S., Ganesh, B., Bing, G., Chen, X. J., Liu, L., Miyazawa, H., & Kangawa, Y. (2009). Numerical analysis of Mc-Si crystal growth. : Gettering and Defect Engineering in Semiconductor Technology XIII: GADEST 2009 (pp. 193-198). (Solid State Phenomena; 巻数 156-158). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.156-158.193