Numerical analysis of the dislocation density in multicrystalline silicon for solar cells by the vertical bridgman process

Makoto Inoue, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Bing Gao, Yoshihiro Kangawa, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

5 被引用数 (Scopus)

抄録

We studied the effects of cooling process on the generation of dislocations in multicrystalline silicon grown by the vertical Bridgman process. From the temperature field obtained by a global model, the stress relaxation and multiplication of dislocations were calculated using the Haasen-Alexander-Sumino model. It was found that the multiplication of dislocations is higher in fast cooling processes. It was confirmed that residual stress is low at high temperatures because the movement of the dislocations relaxes the thermal strain, while the residual stress increases with decreasing temperature, because of reduced motion of dislocations and formation of a strain field at lower temperatures.

本文言語英語
論文番号706923
ジャーナルInternational Journal of Photoenergy
2013
DOI
出版ステータス出版済み - 2013

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 原子分子物理学および光学
  • 再生可能エネルギー、持続可能性、環境
  • 材料科学(全般)

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