Numerical analysis of the velocity of SiC growth by the top seeding method

F. Inui, B. Gao, S. Nakano, Koichi Kakimoto

研究成果: Contribution to journalArticle

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Velocity of crystal growth of SiC in a process of solution growth was studied on the basis of a global model of heat and mass transfer in conjunction with a phase diagram of the Si-C system. The growth rate was estimated by flux of carbon to a seed crystal. The results of calculation showed that growth velocity was increased when temperature of a seed crystal was increased. The temperature dependence of growth velocity was mainly determined by the phase diagram of the Si-C system, although the flow pattern was slightly modified by changing temperature distribution in the furnace.

元の言語英語
ページ(範囲)71-74
ページ数4
ジャーナルJournal of Crystal Growth
348
発行部数1
DOI
出版物ステータス出版済み - 6 1 2012

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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