Numerical analysis of the velocity of SiC growth by the top seeding method

F. Inui, B. Gao, S. Nakano, K. Kakimoto

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

Velocity of crystal growth of SiC in a process of solution growth was studied on the basis of a global model of heat and mass transfer in conjunction with a phase diagram of the Si-C system. The growth rate was estimated by flux of carbon to a seed crystal. The results of calculation showed that growth velocity was increased when temperature of a seed crystal was increased. The temperature dependence of growth velocity was mainly determined by the phase diagram of the Si-C system, although the flow pattern was slightly modified by changing temperature distribution in the furnace.

本文言語英語
ページ(範囲)71-74
ページ数4
ジャーナルJournal of Crystal Growth
348
1
DOI
出版ステータス出版済み - 6 1 2012
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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