Numerical analysis of thermoelectric voltage at a metallic point contact using the boltzmann equation

Kohei Ito, Kunio Hijikata, Takayoshi Inoue

研究成果: Contribution to journalArticle査読

抄録

The characteristic size of electronic de vices is rapidly approaching the electron and phonon mean free paths in semiconductor materials. In such devices, the nonequilibrium condition near the interface affects the thermal and charge transport considerably. A microscopic approach is thus required to model the transport in the device. In this study, the authors expand on a previous study of thermal and charge transport near a point contact interface by solving the Boltzmann equation numerically. The electron distribution function, electric field, and thermoelectric voltage are reported, and the nonequilibrium properties and transport near the point contact are discussed quantitatively.

本文言語英語
ページ(範囲)61-70
ページ数10
ジャーナルMicroscale Thermophysical Engineering
1
1
DOI
出版ステータス出版済み - 1 1 1997
外部発表はい

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science (miscellaneous)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Numerical analysis of thermoelectric voltage at a metallic point contact using the boltzmann equation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル