In an InGaAs/(110)InP, a CuAu-I type ordered structure during is formed growth with a propagation of two-monolayer steps (2-MLSs). The numerical calculation with an empirical interatomic potential has suggested that the ordered InGaAs clusters are stabilized at kink edges of the 2-MLSs. We confirmed that In and Ga adatoms preferentially occupy the upper and lower sites at a kink of 2-MLS, respectively. This explains that the CuAu-I type ordered structure which is made of alternately stacked In- and Ga-rich (110) planes is formed by propagation of the 2-MLS with kinks. Our Monte Carlo simulation using the ordering model showed that the ordered structure is actually formed at the growth temperature (approximately 700 K).
|ジャーナル||Applied Surface Science|
|出版ステータス||出版済み - 6 2000|
|イベント||3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn|
継続期間: 10 25 1999 → 10 29 1999
All Science Journal Classification (ASJC) codes
- 化学 (全般)