Numerical calculation with empirical interatomic potential for formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP

Y. Kangawa, N. Kuwano, K. Oki, T. Ito

研究成果: Contribution to journalConference article査読

7 被引用数 (Scopus)

抄録

In an InGaAs/(110)InP, a CuAu-I type ordered structure during is formed growth with a propagation of two-monolayer steps (2-MLSs). The numerical calculation with an empirical interatomic potential has suggested that the ordered InGaAs clusters are stabilized at kink edges of the 2-MLSs. We confirmed that In and Ga adatoms preferentially occupy the upper and lower sites at a kink of 2-MLS, respectively. This explains that the CuAu-I type ordered structure which is made of alternately stacked In- and Ga-rich (110) planes is formed by propagation of the 2-MLS with kinks. Our Monte Carlo simulation using the ordering model showed that the ordered structure is actually formed at the growth temperature (approximately 700 K).

本文言語英語
ページ(範囲)368-373
ページ数6
ジャーナルApplied Surface Science
159
DOI
出版ステータス出版済み - 6 2000
イベント3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
継続期間: 10 25 199910 29 1999

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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