Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth

Xin Liu, Bing Gao, Koichi Kakimoto

研究成果: ジャーナルへの寄稿記事

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Abstract Czochralski (CZ) growth of single silicon (Si) crystals is invariably accompanied by transport of impurities such as carbon (C), oxygen (O), and related compounds produced by reactions at high temperature. To study the generation and accumulation of C during the melting process, a transient global model was developed that included coupled O and C transport. Transport phenomena of C, O, and related compounds were predicted by considering five chemical reactions in the furnace. The dynamic behavior of impurities was revealed during the melting process of the Si feedstock. It was found that C contamination is activated once the melting front contacts argon gas. For accurate control of C contamination in CZ-Si crystals, the accumulation of C during the melting stage should be considered. Parameter studies of furnace pressure and gas flow rate were conducted on the accumulation of C during the melting stage. At the gas/melt interface, pressure and flow rate affected the C flux in different ways. The results suggest that increase in gas flow rate could reduce C contamination much more effectively than decrease in pressure.

元の言語英語
記事番号22364
ページ(範囲)58-64
ページ数7
ジャーナルJournal of Crystal Growth
417
DOI
出版物ステータス出版済み - 5 1 2015

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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