Numerical modeling of SiC-CVD in a horizontal hot-wall reactor

Shin Ichi Nishizawa, Michel Pons

研究成果: ジャーナルへの寄稿学術誌査読

12 被引用数 (Scopus)

抄録

A numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. In order to explain the effect of surface polarity, Si-face and C-face, the surface reaction model was improved. Then, the growth processes and doping features of both Si-face and C-face were analyzed. The role of conditions at growing surface, such as surface mass flux of both Si-containing and C-containing species, surface concentration of Si-containing and C-containing species and their ratio, is investigated. Then, the deposition and etching rates, and doping concentration are analyzed as the function of those parameters. In addition, surface morphology of growing epitaxial layer is also investigated in connection with growing surface condition.

本文言語英語
ページ(範囲)100-103
ページ数4
ジャーナルMicroelectronic Engineering
83
1 SPEC. ISS.
DOI
出版ステータス出版済み - 1月 2006
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

フィンガープリント

「Numerical modeling of SiC-CVD in a horizontal hot-wall reactor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル