Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor

Shin ichi Nishizawa, Michel Pons

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature.

本文言語英語
ページ(範囲)334-336
ページ数3
ジャーナルJournal of Crystal Growth
303
1 SPEC. ISS.
DOI
出版ステータス出版済み - 5 1 2007
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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