TY - JOUR
T1 - Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor
AU - Nishizawa, Shin ichi
AU - Pons, Michel
PY - 2007/5/1
Y1 - 2007/5/1
N2 - Numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature.
AB - Numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature.
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U2 - 10.1016/j.jcrysgro.2006.12.018
DO - 10.1016/j.jcrysgro.2006.12.018
M3 - Article
AN - SCOPUS:34147142516
VL - 303
SP - 334
EP - 336
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1 SPEC. ISS.
ER -