Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

M. Pons; S. Nishizawa; P. Wellmann; M. Ucar; E. Blanquet; J. M. Dedulle; F. Baillet; D. Chaussende; C. Bernard; R. Madar

Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

M. Pons, S. Nishizawa, P. Wellmann, M. Ucar, E. Blanquet, J. M. Dedulle, F. Baillet, D. Chaussende, C. Bernard, R. Madar

研究成果: Contribution to conference › Paper › 査読

抄録

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

本文言語	英語
ページ	1-12
ページ数	12
出版ステータス	出版済み - 12 1 2005
外部発表	はい
イベント	15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, ドイツ継続期間: 9 5 2005 → 9 9 2005

その他

その他	15th European Conference on Chemical Vapor Deposition, EUROCVD-15
国/地域	ドイツ
City	Bochum
Period	9/5/05 → 9/9/05

All Science Journal Classification (ASJC) codes

工学（全般）

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引用スタイル

Numerical simulation of SIC processes : A characterization tool for the design of epitaxial structures in electronics. / Pons, M.; Nishizawa, S.; Wellmann, P.; Ucar, M.; Blanquet, E.; Dedulle, J. M.; Baillet, F.; Chaussende, D.; Bernard, C.; Madar, R.

2005. 1-12 Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, ドイツ.

研究成果: Contribution to conference › Paper › 査読

Pons, M, Nishizawa, S, Wellmann, P, Ucar, M, Blanquet, E, Dedulle, JM, Baillet, F, Chaussende, D, Bernard, C & Madar, R 2005, 'Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics', Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, ドイツ, 9/5/05 - 9/9/05 pp. 1-12.

Pons, M. ; Nishizawa, S. ; Wellmann, P. ; Ucar, M. ; Blanquet, E. ; Dedulle, J. M. ; Baillet, F. ; Chaussende, D. ; Bernard, C. ; Madar, R. / Numerical simulation of SIC processes : A characterization tool for the design of epitaxial structures in electronics. Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, ドイツ.12 p.

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abstract = "Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a {"}daily interaction{"}. The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.",

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AU - Pons, M.

AU - Nishizawa, S.

AU - Wellmann, P.

AU - Ucar, M.

AU - Blanquet, E.

AU - Dedulle, J. M.

AU - Baillet, F.

AU - Chaussende, D.

AU - Bernard, C.

AU - Madar, R.

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AB - Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

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Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

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