Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

M. Pons, S. Nishizawa, P. Wellmann, M. Ucar, E. Blanquet, J. M. Dedulle, F. Baillet, D. Chaussende, C. Bernard, R. Madar

研究成果: Contribution to conferencePaper査読

抄録

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

本文言語英語
ページ1-12
ページ数12
出版ステータス出版済み - 12 1 2005
外部発表はい
イベント15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, ドイツ
継続期間: 9 5 20059 9 2005

その他

その他15th European Conference on Chemical Vapor Deposition, EUROCVD-15
国/地域ドイツ
CityBochum
Period9/5/059/9/05

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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