Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

M. Pons; S. Nishizawa; P. Wellmann; M. Ucar; E. Blanquet; J. M. Dedulle; F. Baillet; D. Chaussende; C. Bernard; R. Madar

Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

M. Pons, S. Nishizawa, P. Wellmann, M. Ucar, E. Blanquet, J. M. Dedulle, F. Baillet, D. Chaussende, C. Bernard, R. Madar

研究成果: 会議への寄与タイプ › 学会誌 › 査読

抄録

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

本文言語	英語
ページ	1-12
ページ数	12
出版ステータス	出版済み - 12月 1 2005
外部発表	はい
イベント	15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, ドイツ継続期間: 9月 5 2005 → 9月 9 2005

その他

その他	15th European Conference on Chemical Vapor Deposition, EUROCVD-15
国/地域	ドイツ
City	Bochum
Period	9/5/05 → 9/9/05

!!!All Science Journal Classification (ASJC) codes

工学（全般）

他のファイルとリンク

引用スタイル

Pons, M, Nishizawa, S, Wellmann, P, Ucar, M, Blanquet, E, Dedulle, JM, Baillet, F, Chaussende, D, Bernard, C & Madar, R 2005, 'Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics', Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, ドイツ, 9/5/05 - 9/9/05 pp. 1-12.

@conference{991df72683054d8c8d4e7e986f0fe6ee,

title = "Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics",

abstract = "Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a {"}daily interaction{"}. The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.",

author = "M. Pons and S. Nishizawa and P. Wellmann and M. Ucar and E. Blanquet and Dedulle, {J. M.} and F. Baillet and D. Chaussende and C. Bernard and R. Madar",

year = "2005",

month = dec,

day = "1",

language = "English",

pages = "1--12",

note = "15th European Conference on Chemical Vapor Deposition, EUROCVD-15 ; Conference date: 05-09-2005 Through 09-09-2005",

}

TY - CONF

T1 - Numerical simulation of SIC processes

T2 - 15th European Conference on Chemical Vapor Deposition, EUROCVD-15

AU - Pons, M.

AU - Nishizawa, S.

AU - Wellmann, P.

AU - Ucar, M.

AU - Blanquet, E.

AU - Dedulle, J. M.

AU - Baillet, F.

AU - Chaussende, D.

AU - Bernard, C.

AU - Madar, R.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

AB - Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

UR - http://www.scopus.com/inward/record.url?scp=31844440869&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31844440869&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844440869

SP - 1

EP - 12

Y2 - 5 September 2005 through 9 September 2005

ER -

Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

抄録

その他

!!!All Science Journal Classification (ASJC) codes

他のファイルとリンク

フィンガープリント

引用スタイル