Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation

Masakazu Hattori, Hiroshi Ikenoue, Daisuke Nakamura, Tatsuo Okada

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Observation of graphene growing process on SiC(0001) step and terrace structure formed by direct laser patterning is proposed. We have proposed a novel method of direct growth of patterned graphene on SiC(0001) surfaces using KrF excimer-laser irradiation. KrF excimer-laser with a wavelength of 248 nm and a duration of 55 ns was used to graphene forming in this study. Laser irradiation was achieved with various laser fluenece. Grain size and number of layers of the graphene was varied by laser irradiation condition. Through conductive atomic force microscopy, it was observed that graphene grain expanded from (112-n) faced step area to (0001) faced terrace area in initial graphene growth process. From the result of the Raman spectroscopy, transmission electron microscopy and Conductive AFM, we summarized graphene growth process on SiC(0001) surfaces.

本文言語英語
ホスト出版物のタイトルLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI
編集者Beat Neuenschwander, Stephan Roth, Costas P. Grigoropoulos, Tetsuya Makimura
出版社SPIE
ISBN(電子版)9781628419702
DOI
出版ステータス出版済み - 1月 1 2016
イベントLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI - San Francisco, 米国
継続期間: 2月 15 20162月 18 2016

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9735
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

その他

その他Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI
国/地域米国
CitySan Francisco
Period2/15/162/18/16

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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