Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

Yutaka Noguchi, Rieko Ueda, Tohru Kubota, Toshiya Kamikado, Shiyoshi Yokoyama, Takashi Nagase

研究成果: ジャーナルへの寄稿記事

13 引用 (Scopus)

抜粋

We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

元の言語英語
ページ(範囲)2762-2766
ページ数5
ジャーナルThin Solid Films
516
発行部数9
DOI
出版物ステータス出版済み - 3 3 2008
外部発表Yes

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用