Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, H. Harima

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

Backscattering Raman spectra of SiC polytype crystals with SiC{0001} polar faces have been measured using deep ultraviolet (DUV), UV, and visible (VIS) excitation sources. We have found that for DUV excitation the intensity profiles of zone-folded modes differ markedly for Si and C faces. This Raman spectral feature is attributed to the presence of nonpropagating phonon modes confined in the near-surface region. It is concluded that the surface-bound phonon modes created with DUV photon field extend over a region a few hundred nanometers in depth, and that the displacements of the phonon modes are anisotropic in the direction of the polar axis. This surface-orientation-dependent Raman spectrum can be used to identify the surface polarity of SiC polytypes.

本文言語英語
論文番号115321
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
75
11
DOI
出版ステータス出版済み - 3 23 2007
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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