Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements

Terutaka Goto, Hiroshi Yamada-Kaneta, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura

研究成果: Contribution to journalConference article査読

8 被引用数 (Scopus)

抄録

We have succeeded in direct observation of isolated vacancies in high purity silicon crystals grown by a floating zone (FZ) method using low-temperature ultrasonic measurements. The softening of elastic constants below 20 K down to 20 mK is observed in nondoped FZ silicon and B-doped FZ silicon. This softening is caused by an interaction of electric quadrupoles of triply degenerate vacancy orbital to elastic strains of ultrasonic waves. The lowtemperature elastic softening measured by ultrasonic methods verifies existence of the isolated vacancies in Pv-region distributed in pure crystal of a Czockralski ingot. The ultrasonic measurement of the low-temperature softening is a faithful probe for vacancy evaluation in high purity silicon crystals in commercial base. copyright The Electrochemical Society.

本文言語英語
ページ(範囲)375-385
ページ数11
ジャーナルECS Transactions
3
4
DOI
出版ステータス出版済み - 12 1 2006
外部発表はい
イベントHigh Purity Silicon 9 - 210th Electrochemical Society Meeting - Cancun, メキシコ
継続期間: 10 29 200611 3 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)

フィンガープリント 「Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル