Ohmic contact for silicon carbide by carbon nanotubes

Masafumi Inaba, Kazuma Suzuki, Yu Hirano, Wataru Norimatsu, Michiko Kusunoki, Hiroshi Kawarada

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抄録

The electrical contact properties of silicon carbide (SiC) and carbon nanotubes (CNTs) were measured by conductive atomic force microscopy (C-AFM). A CNT forest was synthesized by SiC surface decomposition. Trenches, which electrically separate the conduction area, were fabricated using a focused ion beam (FIB) without a cover layer, and the resistance of each island was measured by C-AFM. From the dependence of the resistance on the CNT forest island size, the contact resistance between the CNTs and the SiC substrate was measured. By varying the dopant density in the SiC substrate, the Schottky barrier height was evaluated to be ~0.5 eV. This is slightly higher than a previously reported result obtained from a similar setup with a metal covering the CNT forest. We assumed that the damaged region existed in the islands, which is due to the trench formation by the FIB. The commensurate barrier height was obtained with the length of the damaged region assumed to be ~3 μm. Here, we could estimate the resistivity of a CNT/SiC interface without a cover layer. This indicates that a CNT forest on SiC is useful as a brief contact electrode.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2015
編集者Mario Saggio, Fabrizio Roccaforte, Filippo Giannazzo, Danilo Crippa, Francesco La Via, Roberta Nipoti
出版者Trans Tech Publications Ltd
ページ561-564
ページ数4
ISBN(印刷物)9783035710427
DOI
出版物ステータス出版済み - 1 1 2016
イベント16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, イタリア
継続期間: 10 4 201510 9 2015

出版物シリーズ

名前Materials Science Forum
858
ISSN(印刷物)0255-5476

その他

その他16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
イタリア
Sicily
期間10/4/1510/9/15

Fingerprint

Carbon Nanotubes
Ohmic contacts
Silicon carbide
silicon carbides
electric contacts
Carbon nanotubes
carbon nanotubes
Focused ion beams
Atomic force microscopy
ion beams
atomic force microscopy
Substrates
Contact resistance
silicon carbide
contact resistance
coverings
Metals
Doping (additives)
Decomposition
decomposition

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Inaba, M., Suzuki, K., Hirano, Y., Norimatsu, W., Kusunoki, M., & Kawarada, H. (2016). Ohmic contact for silicon carbide by carbon nanotubes. : M. Saggio, F. Roccaforte, F. Giannazzo, D. Crippa, F. La Via, & R. Nipoti (版), Silicon Carbide and Related Materials 2015 (pp. 561-564). (Materials Science Forum; 巻数 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.561

Ohmic contact for silicon carbide by carbon nanotubes. / Inaba, Masafumi; Suzuki, Kazuma; Hirano, Yu; Norimatsu, Wataru; Kusunoki, Michiko; Kawarada, Hiroshi.

Silicon Carbide and Related Materials 2015. 版 / Mario Saggio; Fabrizio Roccaforte; Filippo Giannazzo; Danilo Crippa; Francesco La Via; Roberta Nipoti. Trans Tech Publications Ltd, 2016. p. 561-564 (Materials Science Forum; 巻 858).

研究成果: 著書/レポートタイプへの貢献会議での発言

Inaba, M, Suzuki, K, Hirano, Y, Norimatsu, W, Kusunoki, M & Kawarada, H 2016, Ohmic contact for silicon carbide by carbon nanotubes. : M Saggio, F Roccaforte, F Giannazzo, D Crippa, F La Via & R Nipoti (版), Silicon Carbide and Related Materials 2015. Materials Science Forum, 巻. 858, Trans Tech Publications Ltd, pp. 561-564, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, イタリア, 10/4/15. https://doi.org/10.4028/www.scientific.net/MSF.858.561
Inaba M, Suzuki K, Hirano Y, Norimatsu W, Kusunoki M, Kawarada H. Ohmic contact for silicon carbide by carbon nanotubes. : Saggio M, Roccaforte F, Giannazzo F, Crippa D, La Via F, Nipoti R, 編集者, Silicon Carbide and Related Materials 2015. Trans Tech Publications Ltd. 2016. p. 561-564. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.858.561
Inaba, Masafumi ; Suzuki, Kazuma ; Hirano, Yu ; Norimatsu, Wataru ; Kusunoki, Michiko ; Kawarada, Hiroshi. / Ohmic contact for silicon carbide by carbon nanotubes. Silicon Carbide and Related Materials 2015. 編集者 / Mario Saggio ; Fabrizio Roccaforte ; Filippo Giannazzo ; Danilo Crippa ; Francesco La Via ; Roberta Nipoti. Trans Tech Publications Ltd, 2016. pp. 561-564 (Materials Science Forum).
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