Ohmic contact formation on n-type Ge by direct deposition of TiN

Masatoshi Iyota, Keisuke Yamamoto, Dong Wang, Haigui Yang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

42 引用 (Scopus)

抄録

We succeeded in Ohmic contact formation on an n-Ge substrate by direct sputter deposition from a TiN target and subsequent postmetallization annealing (PMA) at 350°C. The Schottky barrier heights of the TiN/n-Ge and TiN/p-Ge contacts were 0.18 eV and 0.50 eV, respectively, and were maintained up to a PMA temperature of 550 °C. These electrical characteristics are likely to be associated with an approximately 1-nm-thick interlayer formed at a TiN/Ge interface, which leads to the alleviation of the Fermi level pinning. We demonstrated the validity of the TiN/n-Ge contact using an n+ /p junction, which showed an excellent ideal factor of n=1.01.

元の言語英語
記事番号192108
ジャーナルApplied Physics Letters
98
発行部数19
DOI
出版物ステータス出版済み - 5 9 2011

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electric contacts
annealing
p-n junctions
interlayers
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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Ohmic contact formation on n-type Ge by direct deposition of TiN. / Iyota, Masatoshi; Yamamoto, Keisuke; Wang, Dong; Yang, Haigui; Nakashima, Hiroshi.

:: Applied Physics Letters, 巻 98, 番号 19, 192108, 09.05.2011.

研究成果: ジャーナルへの寄稿記事

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