抄録
Mo/Al/Ti or TiN/TiSi2 ohmic contacts were fabricated on AlGaN/GaN HEMT structures having various thicknesses of AlGaN layers. Optimum thicknesses depending on annealing temperature were found, which should be correlated with the contact formation mechanism.
本文言語 | 英語 |
---|---|
ページ(範囲) | 265-270 |
ページ数 | 6 |
ジャーナル | ECS Transactions |
巻 | 61 |
号 | 4 |
DOI | |
出版ステータス | 出版済み - 1 1 2014 |
外部発表 | はい |
イベント | Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, 米国 継続期間: 5 11 2014 → 5 15 2014 |
All Science Journal Classification (ASJC) codes
- Engineering(all)